AOD413Y [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AOD413Y |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD413Y
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD413Y uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard product
AOD413Y is Pb free, inside and out. It uses Pb-free
die attach and plating material(meets ROHS & Sony
259 specifications). AOD413YL is a Green Product
ordering option. AOD413Y and AOD413YL are
electrically identical.
VDS (V) = -40V
ID = -12A (VGS = -10V)
RDS(ON) < 45mΩ (VGS = -10V)
RDS(ON) < 69mΩ (VGS = -4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±20
-12
V
A
TA=25°C G
TA=100°C G
ID
-12
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
-30
-12
A
30
mJ
TC=25°C
Power Dissipation B
TC=100°C
50
PD
W
25
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
16.7
40
Max
25
50
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
Steady-State
Steady-State
RθJL
2.5
Alpha & Omega Semiconductor, Ltd.
AOD413Y
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-10mA, VGS=0V
-40
V
V
DS=-32V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
±100
-3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1
-1.9
VGS=-10V, VDS=-5V
-30
A
V
GS=-10V, ID=-12A
36
56
45
70
69
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
mΩ
S
VGS=-4.5V, ID=-8A
VDS=-5V, ID=-12A
IS=-1A,VGS=0V
51
gFS
VSD
IS
Forward Transconductance
16
Diode Forward Voltage
-0.75
-1
V
Maximum Body-Diode Continuous Current
-12
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
657
143
63
pF
pF
pF
Ω
V
GS=0V, VDS=-20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
6.5
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
14.1
7
nC
nC
nC
nC
ns
Qg(4.5V)
VGS=-10V, VDS=-20V, ID=-12A
Qgs
Qgd
tD(on)
tr
2.2
4.1
8
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-20V, RL=1.7Ω,
12.2
24
ns
R
GEN=3Ω
tD(off)
tf
ns
12.5
23.2
18.2
ns
trr
IF=-12A, dI/dt=100A/µs
IF=-12A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 0: Oct 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD413Y
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
30
25
20
15
10
5
-10V
-5V
-6V
VDS=-5V
-4.5V
20
15
10
5
-4V
-3.5V
125°C
2.5
VGS=-3V
25°C
3.5
0
0
0
1
2
3
4
5
1
1.5
2
3
4
4.5
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
70
65
60
55
50
45
40
35
30
1.80
1.60
1.40
1.20
1.00
0.80
VGS=-10V
ID=-12A
VGS=-4.5V
VGS=-4.5V
ID=-8A
VGS=-10V
0
5
10
15
20
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
150
135
120
105
90
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-12A
125°C
125°C
75
60
25°C
25°C
45
30
3
4
5
6
7
8
9
10
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD413Y
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
8
VDS=-15V
ID=-12A
Ciss
750
500
250
0
6
4
Coss
Crss
2
0
0
10
20
-VDS (Volts)
30
40
0
3
6
9
12
15
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
200
TJ(Max)=175°C, TA=25°C
TJ(Max)=175°C
TA=25°C
10µs
160
120
80
40
0
RDS(ON)
limited
1ms
100µs
10ms
DC
0.1
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=3°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD413Y
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14
12
10
8
60
50
40
30
20
10
0
L ⋅ ID
BV −VDD
t =
A
TA=25°C
6
0
25
50
75
100
125
150
175
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
T
CASE (°C)
Figure 13: Power De-rating (Note B)
60
14
12
10
8
TA=25°C
50
40
30
20
10
0
6
4
2
0
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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