AOL1401L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AOL1401L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1401
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1401 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected. Standard Product AOL1401 is Pb-
free (meets ROHS & Sony 259 specifications).
AOL1401L is a Green Product ordering option.
AOL1401 and AOL1401L are electrically identical.
VDS (V) = -38V
ID = -85A
RDS(ON) < 8.5mΩ (VGS = -10V)
RDS(ON) < 10mΩ (VGS = -4.5V)
ESD Rating: 3000V HBM
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
S
Bottom tab
connected to
drain
D
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-38
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±25
-85
V
TC=25°C
TC=100°C
ID
-62
Pulsed Drain Current C
IDM
A
-120
-12
Continuous Drain
Current G
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
IDSM
PD
-9
100
W
Power Dissipation B
Power Dissipation A
50
2.1
PDSM
W
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
21
48
1
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
60
Steady-State
Steady-State
RθJC
1.5
Alpha & Omega Semiconductor, Ltd.
AOL1401
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-38
V
VDS=-30V, VGS=0V
-100
-500
±1
IDSS
Zero Gate Voltage Drain Current
nA
TJ=55°C
µA
µA
V
VDS=0V, VGS=±20V
VDS=0V, VGS=±25V
IGSS
Gate-Body leakage current
±10
-3.5
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
V
V
DS=VGS ID=-250µA
-1.5
-2.2
GS=-10V, VDS=-5V
-120
A
VGS=-20V, ID=-20A
6.8
9.1
7.9
50
8.5
11
10
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
S
V
V
GS=-10V, ID=-20A
DS=-5V, ID=-20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=-1A,VGS=0V
0.71
-1
V
Maximum Body-Diode Continuous Current
14.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3800
560
350
7.5
4560
9
pF
pF
pF
Ω
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
61.2
30.8
11.88
15.4
13.5
17
74
37
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=-10V, VDS=-20V, ID=-20A
Qgs
Qgd
tD(on)
tr
Gate Drain Charge
Turn-On DelayTime
VGS=-10V, VDS=-20V, RL=1Ω,
GEN=3Ω
Turn-On Rise Time
ns
R
tD(off)
tf
Turn-Off DelayTime
97
ns
Turn-Off Fall Time
43
ns
trr
IF=-20A, dI/dt=100A/µs
IF=-20A, dI/dt=100A/µs
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
36
ns
Qrr
29
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C.
A
Rev 0: September 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOL1401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
90
60
30
0
30
25
20
15
10
5
-14V
-10V
VDS=-5V
125°C
-6V
-4.5V
-4V
25°C
Vgs=-3.5V
0
0
1
2
3
4
5
2
2.5
3
3.5
-VGS(Volts)
4
4.5
5
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
9
8
7
6
1.8
1.6
1.4
1.2
1
VGS=-20V
ID=-20A
VGS=-10V
VGS=-10V
ID=-20A
VGS=-20V
0.8
0
5
10
15
20
25
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
30
25
20
15
10
5
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-20A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOL1401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
4000
3000
2000
1000
0
Ciss
VDS=-20V
ID=-20A
8
6
4
Coss
Crss
2
0
0
10
20
30
40
50
60
70
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
1000
800
600
400
200
0
TJ(Max)=175°C, TA=25°C
10µs
TJ(Max)=175°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10ms
100m
DC
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note B)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
T
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOL1401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
120
50
90
40
30
20
10
0
60
30
0
TA=25°C
0
25
50
75
CASE (°C)
Figure 12: Power De-rating (Note B)
100
125
150
175
0.01
0.1
1
10
100
1000
T
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-
Ambient (Note H)
100
80
60
40
20
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
100
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
0.1
PD
0.01
0.001
Ton
Single Pulse
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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