AON4807 [AOS]
30V Dual P-Channel MOSFET; 双路30V P沟道MOSFET
| 型号： | AON4807 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V Dual P-Channel MOSFET |
| 文件： | 总5页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4807
30V Dual P-Channel MOSFET
General Description
Product Summary
VDS
-30V
The AON4807 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
-4A
< 68mΩ
< 105mΩ
DFN 3x2A
D1
D2
Top View
Bottom View
Top View
S1
G1
S2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
G2
G2
G1
S2
S1
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
-4
V
A
TA=25°C
TA=70°C
Continuous Drain
Current
ID
-3
Pulsed Drain Current C
IDM
PD
-18
TA=25°C
TA=70°C
1.9
W
°C
Power Dissipation B
1.2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
65
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
51.5
82
37
RθJA
Steady-State
Steady-State
100
50
RθJL
Rev 1: July 2012
www.aosmd.com
Page 1 of 5
AON4807
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.3
nA
V
VGS(th)
ID(ON)
VDS=VGS，ID=-250µA
-1.3
-18
-1.8
VGS=-10V, VDS=-5V
VGS=-10V, ID=-4A
A
54
76
68
95
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-3A
80
105
mΩ
S
VDS=-5V, ID=-4A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
8
IS=-1A,VGS=0V
-0.78
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
290
60
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
40
VGS=0V, VDS=0V, f=1MHz
16
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.8
2.8
1.1
1.3
6
10
6
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=-10V, VDS=-15V, ID=-4A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V,
5
ns
RL=3.75Ω, RGEN=3Ω
tD(off)
tf
21
9
ns
ns
trr
IF=-4A, dI/dt=100A/µs
IF=-4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10
20
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: July 2012
www.aosmd.com
Page 2 of 5
AON4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
10
8
-10V
-6V
VDS=-5V
-4.5V
-4V
6
4
125°C
-3.5V
2
25°C
VGS=-3V
4
0
0
0
1
2
3
4
5
0
1
2
3
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
110
100
90
1.6
VGS=-10V
ID=-4A
1.4
1.2
1
VGS=-4.5V
80
70
VGS=-4.5V
ID=-3A
60
50
VGS=-10V
0.8
40
0
25
50
75
100
125
150
175
0
2
4
6
8
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
220
180
140
100
60
1.0E+01
ID=-4A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
125°C
125°C
25°C
25°C
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: July 2012
www.aosmd.com
Page 3 of 5
AON4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
VDS=-15V
ID=-4A
350
300
250
200
150
100
50
Ciss
8
6
4
Coss
2
Crss
0
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10000
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=100°C/W
1
0.1
PD
Single Pulse
0.001
0.01
0.001
Ton
T
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: July 2012
www.aosmd.com
Page 4 of 5
AON4807
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
BVDSS
Vgs
Vdd
+
VDC
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 1: July 2012
www.aosmd.com
Page 5 of 5
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