AON6484 [AOS]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | AON6484 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6484
100V N-Channel MOSFET
General Description
Product Summary
VDS
100V
The AON6484 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
12A
< 79mΩ
< 90mΩ
100% UIS Tested
100% Rg Tested
D
DFN5X6
Top View
Top View
Bottom View
1
8
2
3
7
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
100
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
TC=25°C
12.0
Continuous Drain
Current G
ID
TC=100°C
7.5
A
Pulsed Drain Current C
IDM
27
3.3
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
2.7
IAS, IAR
14
A
EAS, EAR
10
mJ
TC=25°C
Power Dissipation B
TC=100°C
25.0
10.0
2
PD
W
TA=25°C
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
21
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
25
60
5
RθJA
Steady-State
Steady-State
50
RθJC
3.5
Rev 0: Sep 2010
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Page 1 of 6
AON6484
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
100
V
VDS=100V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.7
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.6
27
2.2
V
GS=10V, VDS=5V
A
VGS=10V, ID=7.5A
63.5
122
70
79
151
90
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=5A
VDS=5V, ID=7.5A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
34
0.74
1
V
Maximum Body-Diode Continuous Current
25
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
620
38
778
55
942
81
pF
pF
pF
Ω
VGS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
13
24
35
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=7.5A
VGS=10V, VDS=50V, RL=6.6Ω,
0.7
1.45
2.2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15
7
19.4
9.6
3
24
12
3.6
7
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2.4
3
5
6
2.5
21
2.4
23
142
ns
R
GEN=3Ω
tD(off)
tf
ns
ns
trr
IF=7.5A, dI/dt=500A/µs
IF=7.5A, dI/dt=500A/µs
16
99
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
185
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Sep 2010
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Page 2 of 6
AON6484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
20
15
10
5
10V
VDS=5V
4.5V
3.5V
125°C
25°C
VGS=3V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
100
90
80
70
60
50
2.8
2.4
2.0
1.6
1.2
0.8
VGS=10V
ID=7.5A
VGS=4.5V
VGS=4.5V
ID=5A
VGS=10V
0
25
50
75
100 125 150 175 200
0
5
10
ID (A)
15
20
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
150
130
110
90
1.0E+02
1.0E+01
ID=7.5A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
70
50
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Sep 2010
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Page 3 of 6
AON6484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=50V
ID=7.5A
1000
800
600
400
200
0
8
Ciss
6
4
2
Crss
Coss
0
0
5
10
15
20
0
20
40
VDS (Volts)
Figure 8: Capacitance Characteristics
60
80
100
Qg (nC)
Figure 7: Gate-Charge Characteristics
10000
1000
100
10
100.0
10.0
1.0
10µs
RDS(ON)
limited
TJ(Max)=150°C
100µs
1ms
TC=25°C
DC
TJ(Max)=150°C
10ms
0.1
TC=25°C
0.0
1
0.01
0.1
1
10
100
0.00001 0.0001 0.001
0.01
0.1
10
1
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5°C/W
0.1
0.01
PD
Ton
T
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Sep 2010
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Page 4 of 6
AON6484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
30
TA=25°C
25
TA=100°C
20
10.0
15
10
5
TA=150°C
TA=125°C
1.0
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
15
12
9
TA=25°C
6
3
1
0
1E-05
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
100
125
150
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Sep 2010
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Page 5 of 6
AON6484
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: Sep 2010
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Page 6 of 6
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