AON6908A [AOS]
30V Dual Asymmetric N-Channel MOSFET; 30V双路非对称N沟道MOSFET
| 型号： | AON6908A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V Dual Asymmetric N-Channel MOSFET |
| 文件： | 总11页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6908A
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
Q1
Q2
The AON6908A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6 package. The Q1 "High
Side" MOSFET is desgined to minimze switching losses.
The Q2 "Low Side" MOSFET is an SRFET™ that features
low RDS(ON) to reduce conduction losses as well as an
integrated Schottky diode with low QRR and Vf to reduce
switching losses. The AON6908A is well suited for use in
compact DC/DC converter applications.
VDS
30V
30V
ID (at VGS=10V)
46A
80A
RDS(ON) (at VGS=10V)
<8.9mΩ
<3.6mΩ
RDS(ON) (at VGS = 4.5V)
<12.5mΩ <4.5mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
Bottom View
PIN1
Bottom View
Top View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Max Q1
Max Q2
Units
Drain-Source Voltage
Gate-Source Voltage
30
V
V
VGS
±20
46
±12
80
TC=25°C
Continuous Drain
CurrentG
Pulsed Drain Current C
ID
TC=100°C
A
28
62
IDM
100
11.5
9
200
17
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
A
13.5
40
IAS, IAR
EAS, EAR
VSPIKE
27
A
mJ
V
36
80
VDS Spike
100ns
36
36
TC=25°C
TC=100°C
TA=25°C
TA=70°C
31
78
PD
W
Power Dissipation B
Power Dissipation A
12
31
1.9
1.2
2.1
1.3
PDSM
W
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Symbol
Typ Q1 Typ Q2 Max Q1 Max Q2
Units
°C/W
°C/W
°C/W
t
≤ 10s
29
56
24
50
35
67
4
29
60
RθJA
Steady-State
Steady-State
RθJC
3.3
1.2
1.6
Rev0 : Sep 2010
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Page 1 of 11
AON6908A
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=11.5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.4
nA
V
VGS(th)
ID(ON)
1.3
1.8
100
A
7.4
11.1
10
8.9
13.4
12.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=11.5A
mΩ
S
VDS=5V, ID=11.5A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
50
IS=1A,VGS=0V
0.7
1
V
Maximum Body-Diode Continuous Current
34
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
680
260
18
850
380
30
1110
540
51
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.7
1.4
2.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10
4.6
1.6
1.5
12.5
5.7
2
15
6.9
2.4
3.6
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=11.5A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2.6
5
VGS=10V, VDS=15V, RL=0.75Ω,
9.5
18.5
4
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=11.5A, dI/dt=500A/µs
IF=11.5A, dI/dt=500A/µs
8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10.5
17.2
13
21
ns
Qrr
13
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Sep 2010
www.aosmd.com
Page 2 of 11
AON6908A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
80
60
40
20
0
10V
5V
VDS=5V
4.5V
4V
6V
7V
3.5V
125°C
VGS=3V
25°C
3.5
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
4
4.5
5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
14
12
10
8
1.8
1.6
1.4
1.2
1
VGS=10V
ID=11.5A
VGS=4.5V
VGS
=4.5V
ID=11.5A
6
VGS=10V
4
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
1.0E+02
1.0E+01
ID=11.5A
20
15
10
5
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
125°C
25°C
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
1.4
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Sep 2010
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Page 3 of 11
AON6908A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
1200
1000
800
600
400
200
0
VDS=15V
ID=11.5A
8
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
10
12
14
0
5
10
15
VDS (Volts)
20
25
30
Q
g (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100us
1ms
DC
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4°C/W
0.1
0.01
PD
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Sep 2010
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Page 4 of 11
AON6908A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
35
30
25
20
15
10
5
TA=100°C
TA=25°C
TA=125°C
TA=150°C
0
10.0
0.000001
0
25
50
75
100
125
150
0.00001
0.0001
0.001
TCASE (°C)
Time in avalanche, tA (s)
Figure 13: Power De-rating (Note F)
Figure 12: Single Pulse Avalanche capability (Note
C)
10000
1000
100
10
50
40
30
20
10
0
TA=25°C
1
1000
0
25
50
75
100
125
150
0.00001
0.001
0.1
10
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=67°C/W
0.1
PD
0.01
0.001
Ton
Single Pulse
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Sep 2010
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Page 5 of 11
AON6908A
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=10mA, VGS=0V
VDS=30V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.5
mA
100
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2
nA
V
VGS(th)
ID(ON)
1
1.5
200
A
2.9
4.3
3.3
115
0.4
3.6
5.2
4.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
GS=4.5V, ID=20A
DS=5V, ID=20A
mΩ
S
V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.7
80
V
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3500 4380 5260
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
340
160
0.3
490
280
0.7
640
400
1.1
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
24
31
11
9
38
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
6
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
tD(off)
tf
50
7
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
9
12
15
27
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
17
nC
22
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Sep 2010
www.aosmd.com
Page 6 of 11
AON6908A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
120
90
60
30
0
100
80
60
40
20
0
10V
4.5V
VDS=5V
3V
7V
125°C
25°C
VGS=2.5V
4
1
1.5
2
2.5
3
0
1
2
3
5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
5
2
1.8
1.6
1.4
1.2
1
4
3
2
1
0
VGS=4.5V
ID=20A
VGS=4.5V
VGS=10V
VGS=10V
ID=20A
0.8
0
5
10
15
20
25
30
0
25
50
75
100 125 150 175 200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
10
8
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
6
125°C
25°C
4
2
25°C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Sep 2010
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Page 7 of 11
AON6908A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
5000
4000
3000
2000
1000
0
VDS=15V
ID=20A
Ciss
8
6
4
Coss
2
Crss
0
0
20
40
g (nC)
60
80
0
5
10
15
VDS (Volts)
20
25
30
Q
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
RDS(ON)
limited
TJ(Max)=150°C
10µs
TC=25°C
100µs
DC
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.6°C/W
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Sep 2010
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Page 8 of 11
AON6908A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
TA=25°C
80
TA=100°C
100
60
40
TA=150°C
10
TA=125°C
20
1
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
T
CASE (°C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
100
80
60
40
20
0
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
100
125
15
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Sep 2010
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Page 9 of 11
AON6908A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20A 10A
5A
VDS=30V
IS=1A
VDS=15V
0
50
100
150
200
0
50
100
Temperature (°C)
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
14
12
10
8
3
40
35
30
25
20
15
10
12
10
8
di/dt=800A/µs
di/dt=800A/µs
125ºC
25ºC
2.5
2
125ºC
trr
1.5
1
25ºC
Qrr
6
6
125ºC
4
125ºC
25ºC
S
4
0.5
0
Irm
2
25ºC
20
0
2
0
5
10
15
25
30
0
5
10
15
S (A)
20
25
30
IS (A)
I
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
30
25
20
15
10
5
20
21
18
15
12
9
4
Is=20A
Is=20A
3.5
3
125ºC
trr
25ºC
15
2.5
2
25ºC
125ºC
10
Qrr
1.5
1
25ºC
S
6
125ºC
25ºC
5
0
Irm
3
0.5
125º
0
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 0 : Sep 2010
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Page 10 of 11
AON6908A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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