AON7280 [AOS]
80V N-Channel MOSFET; 80V N沟道MOSFET
| 型号： | AON7280 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 80V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7280
80V N-Channel MOSFET
General Description
Product Summary
VDS
The AON7280 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON), Ciss and Coss. This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
80V
50A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 8.5mΩ
< 12mΩ
R
DS(ON) (at VGS=6V)
100% UIS Tested
100% Rg Tested
DFN 3.3x3.3 EP
Top View
Bottom View
D
Top View
1
8
2
3
7
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
80
V
V
Gate-Source Voltage
VGS
±20
TC=25°C
50
Continuous Drain
Current G
ID
TC=100°C
39
A
A
Pulsed Drain Current C
IDM
160
TA=25°C
TA=70°C
20
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
15
IAS
35
A
EAS
61
mJ
TC=25°C
Power Dissipation B
TC=100°C
83
PD
W
33
6.3
TA=25°C
PDSM
W
°C
Power Dissipation A
4
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
16
45
1
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
55
RθJC
1.5
Rev 0: Dec. 2012
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Page 1 of 6
AON7280
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250uA, VGS=0V
VDS=80V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
80
V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
3.4
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250uA
2.3
2.8
VGS=10V, VDS=5V
VGS=10V, ID=20A
160
A
6.8
11.8
8.7
8.5
14.8
12
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=6V, ID=16A
mΩ
S
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
50
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.7
1
V
50
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1871
265
14
pF
pF
pF
Ω
V
GS=0V, VDS=40V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.6
1.3
2.0
38
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
26.5
8.5
4
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=40V, ID=20A
11.5
8.5
21.5
5.5
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
tD(off)
tf
IF=20A, dI/dt=500A/us
IF=20A, dI/dt=500A/us
trr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
32
ns
Qrr
nC
162
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Dec. 2012
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Page 2 of 6
AON7280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
6V
VDS=5V
80
60
40
20
0
80
60
40
20
0
8V
5V
4.5V
125°C
VGS=4V
25°C
0
1
2
3
4
5
1
2
3
4
5
6
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
12
10
8
2.2
2
1.8
1.6
1.4
1.2
1
VGS=6V
VGS=10V
ID=20A
VGS=10V
6
4
VGS=6V
ID=16A
2
0.8
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
(Note E)
25
20
15
10
5
1.0E+02
1.0E+01
ID=20A
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0
0
2
4
6
8
10
0.0
0.2
0.4
0.6
-VSD (Volts)
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: Dec. 2012
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Page 3 of 6
AON7280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=40V
ID=20A
Ciss
8
2000
1500
1000
500
0
6
Coss
4
2
Crss
0
0
5
10
15
20
25
30
0
10
20
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
40
50
60
70
80
Qg (nC)
Figure 7: Gate-Charge Characteristics
400
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
350
300
250
200
150
100
50
RDS(ON)
limited
10µs
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Ca
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
0.1
0.01
PD
Single Pulse
0.0001
Ton
T
1E-05
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Dec. 2012
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Page 4 of 6
AON7280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
80
TA=25°C
100
10
1
TA=100°C
60
40
20
0
TA=150°C
TA=125°C
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
60
50
40
30
20
10
0
TA=25°C
1
0
25
50
75
100
125
150
1E-05
0.001
0.1
10
1000
TCASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Dec. 2012
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Page 5 of 6
AON7280
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
BVDSS
Vgs
Vdd
+
VDC
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 0: Dec. 2012
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Page 6 of 6
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