AON7410 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AON7410 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7410
30V N-Channel MOSFET
General Description
Features
The AON7410 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in DC - DC
converters and Load Switch applications.
VDS (V) = 30V
ID = 24A
RDS(ON) < 20mΩ
RDS(ON) < 26mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
D
Top View
Bottom View
Top View
1
2
3
4
8
7
6
5
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
Continuous Drain
Current B
VGS
±20
24
V
TC=25°C
TC=100°C
ID
15
Pulsed Drain Current C
Continuous Drain
Current A
IDM
50
A
TA=25°C
TA=70°C
9.5
IDSM
7.7
Avalanche Current C
IAS, IAR
EAS, EAR
17
A
Repetitive avalanche energy L=0.1mH C
14
mJ
TC=25°C
Power Dissipation B
TC=100°C
20
PD
8.3
W
°C
TA=25°C
3.1
PDSM
Power Dissipation A
2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
60
5
Max
40
75
6
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Steady-State
RθJA
Maximum Junction-to-Case B
RθJC
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7410
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.5
nA
V
VGS(th)
ID(ON)
1.4
50
1.8
A
16
24
20
29
26
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS=4.5V, ID=7A
VDS=5V, ID=8A
IS=1A,VGS=0V
21
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
30
S
V
A
0.75
1
Maximum Body-Diode Continuous Current
20
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
440
77
33
3
550
110
55
660
143
77
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
4
4.9
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
7.8
3.6
1.4
1.3
9.8
4.6
1.8
2.2
5
12
5.5
2.2
3
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=8A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS=10V, VDS=15V, RL=2Ω,
3.2
24
6
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs
7
9
11
18
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
12
15
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev11: Jul-2011
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
40
30
20
10
0
VDS= 5V
10V
4.5V
4V
3.5V
125°C
VGS= 3V
25°C
0
1
2
3
4
5
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
26
24
22
20
18
16
14
1.8
1.6
1.4
1.2
1.0
0.8
VGS= 10V
ID= 8A
VGS= 4.5V
VGS= 4.5V
ID= 7A
VGS= 10V
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
50
ID= 8A
45
40
35
30
25
20
15
10
125°C
25°C
125°C
25°C
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
600
400
200
0
10
8
VDS= 15V
ID= 8A
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
25
30
0
2
4
6
8
10
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
300
100
10
TJ(Max)=150°C
TC=25°C
10µs
100µs
200
100
0
1ms
DC
1
RDS(ON)
limited
0.1
0.01
TJ(Max)=150°C
TA=25°C
0.00001 0.0001 0.001
0.01
0.1
1
10
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
10
D=Ton/T
In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6°C/W
1
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
0.1
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
20
10
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
Figure 12: Power De-rating (Note F)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1000
TA=25°C
100
10
1
0.0001 0.001 0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
R
θJA=75°C/W
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance(Note H)
0.1
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7410
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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