AOP806 [AOS]
Dual N-Channel Enhancement Mode Field Effect Transistor; 双N沟道增强型场效应晶体管
| 型号： | AOP806 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOP806
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOP806 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or
in PWM applications.
Standard Product AOP806 is Pb-free (meets
ROHS & Sony 259 specifications).
VDS (V) = 75V
ID = 3.4A (VGS = 10V)
R
DS(ON) < 132mΩ (VGS = 10V)
DS(ON) < 168mΩ (VGS = 4.5V)
R
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D1
S1
D2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
S2
PDIP-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Maximum
Parameter
Symbol
VDS
10 Sec
Steady State
Units
Drain-Source Voltage
75
V
VGS
Gate-Source Voltage
Continuous Drain
Current AF
±25
15
V
A
TA=25°C
TA=70°C
3.4
2.7
2.7
2.1
ID
Pulsed Drain Current B
IDM
TA=25°C
TA=70°C
2.5
1.6
1.6
1
PD
W
Power Dissipation
Avalanche Current B
IAR
10
15
A
Repetitive avalanche energy 0.3mH B
EAR
mJ
°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
40
67
33
t ≤ 10s
Steady-State
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
80
Steady-State
RθJL
40
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOP806
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=75V, VGS=0V
75
V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±25V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
2.3
V
GS=10V, VDS=5V
GS=10V, ID=3.4A
15
A
V
108
162
128
10
132
198
168
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=2A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=3.4A
IS=1A,VGS=0V
S
V
A
0.77
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
290
54
380
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
24
V
GS=0V, VDS=0V, f=1MHz
2.4
3.5
7
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5.1
2.3
1.0
1.2
4
nC
nC
nC
nC
ns
VGS=10V, VDS=30V, ID=3.4A
Qgd
tD(on)
tr
tD(off)
tf
VGS=10V, VDS=30V, RL=8.8Ω,
3.4
14.4
2.4
30.2
21.5
ns
RGEN=3Ω
ns
ns
trr
IF=3.4A, dI/dt=100A/µs
IF=3.4A, dI/dt=100A/µs
45
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s thermal resistance rating.
Rev1: May. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOP806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
15
12
9
6V
10V
4.5V
VDS=5V
4V
125°C
6
6
25°C
3.5V
3
3
0
0
0
1
2
3
4
5
1
2
3
GS(Volts)
4
5
VDS (Volts)
V
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
200
170
140
110
80
1.8
1.6
1.4
1.2
1
VGS=10V
ID=3.4A
VGS=4.5V
VGS=4.5V
ID=2A
VGS=10V
0.8
0.6
50
0
2
4
6
8
10
-50 -25
0
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
210
180
150
120
90
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=3.4A
125°C
125°C
25°C
25°C
60
2
4
6
8
10
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
VGS (Volts)
V
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOP806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
500
400
300
200
100
0
10
VDS=30V
ID=3.4A
8
Ciss
6
4
2
0
Coss
Crss
0
1
2
3
4
5
6
0
10
20
30
VDS (Volts)
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
50
TJ(Max)=150°C TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
40
30
20
10
0
100µs
1ms
10ms
0.1s
RDS(ON)
limited
DC
10s
1s
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=80°C/W
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关型号：
©2020 ICPDF网 联系我们和版权申明