AOT412 [AOS]
N-Channel SDMOSTM Power Transistor; N沟道SDMOSTM功率晶体管
| 型号： | AOT412 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel SDMOSTM Power Transistor |
| 文件： | 总7页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT412
N-Channel SDMOSTM Power Transistor
General Description
Features
The AOT412 and AOT412L is fabricated with SDMOSTM
trench technology that combines excellent RDS(ON) with
low gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
V
DS (V) =100V
(VGS = 10V)
(VGS = 10V)
(VGS = 7V)
ID = 60A
R
DS(ON) < 15.8mΩ
DS(ON) < 19.4mΩ
R
- RoHS Compliant
- AOT412L is Halogen Free
100% UIS Tested!
100% Rg Tested!
TO-220
D
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
100
Units
Drain-Source Voltage
V
VGS
ID
IDM
IDSM
±25
Gate-Source Voltage
V
A
TC=25°C
60
44
Continuous Drain
Current
Pulsed Drain Current C
TC=100°C
140
8.2
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
A
6.6
IAR
47
A
EAR
110
150
75
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
2.6
PDSM
W
Power Dissipation A
TA=70°C
1.7
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
18
48
1
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
40
Steady-State
Steady-State
RθJC
0.7
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT412
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
STATIC PARAMETERS
Parameter
Conditions
Min
Typ
Max
Units
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
VDS=100V, VGS=0V
10
50
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±25V
VDS=VGS ID=250µA
GS=10V, VDS=5V
VGS=10V, ID=20A
100
3.8
nA
V
VGS(th)
ID(ON)
2.6
3.2
V
140
A
13.2
25
15.8
30
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
GS=7V, ID=20A
DS=5V, ID=20A
15.5
30
19.4
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
IS=1A,VGS=0V
0.65
1
Maximum Body-Diode Continuous Current
60
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2150
180
60
2680
260
100
1
3220
340
140
1.5
pF
pF
pF
Ω
V
GS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.5
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
36
10
14
9
45
12
17
15
19
16
27
10
22
96
54
14
20
21
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=50V, ID=20A
VGS=10V, VDS=50V, RL=5Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
15
67
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
29
ns
Qrr
nC
125
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0: Nov-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120
100
80
100
80
60
40
20
0
10V
VDS=5V
7.5V
7V
6.5V
60
6V
40
125°C
25°C
20
VGS=5.5V
4
0
0
2
4
6
8
10
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
17
16
15
14
13
12
11
2.6
2.4
2.2
2
VGS=7V
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
VGS=10V
VGS=7V
ID=20A
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
33
28
23
18
13
8
1.0E+02
ID=20A
125°C
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°C
25°C
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
5
6
7
8
9
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3600
3200
2800
2400
2000
1600
1200
800
VDS=50V
ID=20A
Ciss
8
6
4
Crss
2
Coss
400
0
0
0
10
20
30
40
50
0
20
40
60
80
100
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
800
600
400
200
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
RDS(ON)
10µs
100µs
DC
1ms
10ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
160
140
120
100
80
TA=25°C
TA=100°C
TA=125°C
60
40
TA=150°C
20
0
0
0
25
50
75
100
125
150
175
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
70
60
50
40
30
20
10
0
TA=25°C
1
0
0
0
0.01 0.1
1
10 100 1000
0
25
50
75
100
125
150
175
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=48°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
220
200
180
160
140
120
100
80
50
40
30
20
10
0
30
25
20
15
10
5
2
di/dt=800A/µs
125ºC
25ºC
1.8
1.6
1.4
1.2
1
di/dt=800A/µs
125ºC
trr
25ºC
0.8
0.6
0.4
0.2
0
Qrr
Irm
125ºC
25ºC
S
60
125ºC
25ºC
40
0
20
0
5
10
15
20
25
30
0
5
10
15
S (A)
20
25
30
I
S (A)
I
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
180
160
140
120
100
80
50
35
30
25
20
15
10
5
2
Is=20A
125ºC
Is=20A
125ºC
40
30
20
10
0
1.5
1
trr
25ºC
25ºC
Qrr
125ºC
60
S
25ºC
0.5
40
Irm
25ºC
125º
400
20
0
0
0
200
400
600
800
1000
0
200
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT412
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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