AOTF11C60L [AOS]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | AOTF11C60L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT11C60/AOB11C60/AOTF11C60
600V,11A N-Channel MOSFET
General Description
Product Summary
VDS @ Tj,max
IDM
700
The AOT11C60 & AOB11C60 & AOTF11C60 are
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
80A
RDS(ON),max
Qg,typ
< 0.4Ω
30nC
5.1µJ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT11C60L & AOB11C60L & AOTF11C60L
Top View
TO-263
D2PAK
TO-220
TO-220F
D
D
G
S
S
D
S
D
G
G
S
G
AOT11C60
AOTF11C60
AOB11C60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT11C60/AOB11C60
600
AOTF11C60
Units
Drain-Source Voltage
VDS
V
Gate-Source Voltage
VGS
±30
V
A
TC=25°C
11
9
11*
9*
Continuous Drain
Current
ID
TC=100°C
Pulsed Drain Current C
Avalanche Current C,J
Repetitive avalanche energy C,J
Single pulsed avalanche energy G
IDM
IAR
80
11
60
A
EAR
EAS
mJ
mJ
750
100
20
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B
dv/dt
V/ns
278
2.2
50
W
PD
Derate above 25oC
0.4
W/ oC
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
300
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
°C
Parameter
Symbol
RθJA
AOT11C60/AOB11C60
AOTF11C60
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
65
0.5
65
--
RθCS
Maximum Junction-to-Case
RθJC
0.45
2.5
* Drain current limited by maximum junction temperature.
Rev.2.0 July 2013
www.aosmd.com
Page 1 of 6
AOT11C60/AOB11C60/AOTF11C60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
600
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
700
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.55
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
5
nΑ
V
VDS=5V, ID=250µA
VGS=10V, ID=5.5A
VDS=40V, ID=5.5A
IS=1A,VGS=0V
3
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.36
12
0.4
Ω
S
VSD
0.7
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current C
11
80
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
2000
84
pF
pF
VGS=0V, VDS=100V, f=1MHz
Coss
Effective output capacitance, energy
related H
Co(er)
Co(tr)
60
pF
pF
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
related I
107
V
GS=0V, VDS=100V, f=1MHz
Crss
Rg
Reverse Transfer Capacitance
Gate resistance
2.8
3.5
pF
VGS=0V, VDS=0V, f=1MHz
Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
30
14
7
42
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=480V, ID=11A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
50
50
70
32
485
7.2
VGS=10V, VDS=300V, ID=11A,
Turn-On Rise Time
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
IF=11A,dI/dt=100A/µs,VDS=100V
IF=11A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. L=1.0mH, VDD=150V, RG=25ꢁ, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0 July 2013
www.aosmd.com
Page 2 of 6
AOT11C60/AOB11C60/AOTF11C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
8V
-55°C
VDS=40V
10V
24
18
12
6
7V
10
125°C
6.5V
6V
1
25°C
VGS=5.5V
20
0
0.1
0
5
10
15
25
30
2
4
6
8
10
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
3
2.5
2
VGS=10V
ID=5.5A
VGS=10V
1.5
1
0.5
0
0
5
10
15
D (A)
20
25
-100
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
I
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1E+02
1E+01
1.2
1.1
1
1E+00
1E-01
1E-02
1E-03
1E-04
125°C
25°C
0.9
0.8
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
-100
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
Rev.2.0 July 2013
www.aosmd.com
Page 3 of 6
AOT11C60/AOB11C60/AOTF11C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
Ciss
VDS=480V
ID=11A
1000
Coss
100
6
10
1
Crss
3
0
0.1
1
10
100
1000
0
10
20
Q
30
40
50
g (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
15
12
9
12
10
8
6
Eoss
6
4
3
2
0
0
0
25
50
75
100
125
150
0
100
200
300
400
500
600
TCASE (°C)
VDS (Volts)
Figure 10: Current De-rating (Note B)
Figure 9: Coss stored Energy
100
100
10
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
10
1
100µs
100µs
1ms
1ms
DC
1
10ms
10ms
0.1s
1s
DC
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)11C60 (Note F)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF11C60 (Note F)
Rev.2.0 July 2013
www.aosmd.com
Page 4 of 6
AOT11C60/AOB11C60/AOTF11C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=0.45°C/W
1
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT(B)11C60 (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
1
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF11C60(Note F)
Rev.2.0 July 2013
www.aosmd.com
Page 5 of 6
AOT11C60/AOB11C60/AOTF11C60
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev.2.0 July 2013
www.aosmd.com
Page 6 of 6
相关型号：
AOTF11S60L
Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220F, 3 PIN
AOS
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