AOTF298L [AOS]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | AOTF298L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT298L/AOB298L/AOTF298L
100V N-Channel MOSFET
General Description
Product Summary
VDS
The AOT298L & AOB298L & AOTF298L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low
combination of RDS(ON) and Crss. In addition, switching
behavior is well controlled with a soft recovery body
diode.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
100V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
58A/33A
< 14.5mΩ
100% UIS Tested
100% Rg Tested
Top View
TO-263
D2PAK
D
TO-220
TO-220F
D
G
S
S
S
S
D
D
G
G
G
AOT298L
AOTF298L
AOB298L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT298L/AOB298L
100
AOTF298L
Units
Drain-Source Voltage
VDS
V
V
Gate-Source Voltage
VGS
ID
IDM
IDSM
±20
TC=25°C
58
41
33
26
Continuous Drain
Current
Pulsed Drain Current C
TC=100°C
A
130
9
TA=25°C
TA=70°C
Continuous Drain
Current
A
7
Avalanche Current C
Avalanche energy L=0.1mH C
IAS, IAR
20
20
A
EAS, EAR
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
50
33
16
PD
W
TA=25°C
2.1
1.33
PDSM
W
°C
Power Dissipation A
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
AOT298L/AOB298L
AOTF298L
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
15
60
15
60
RθJA
Steady-State
Steady-State
RθJC
1.5
4.5
Rev 0 : Oct. 2011
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Page 1 of 7
AOT298L/AOB298L/AOTF298L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
100
V
VDS=100V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
4.1
nA
V
VGS(th)
ID(ON)
VDS=VGS，ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
2.7
3.3
130
A
12
19
14.5
24
RDS(ON)
Static Drain-Source On-Resistance
mΩ
TJ=125°C
V
DS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
30
S
V
A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.7
1
70
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1250
727
25
1670
970
43
pF
pF
pF
Ω
VGS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=20A
2
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
19
5.5
6
27
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.5
14
15
14
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
39
ns
Qrr
nC
140
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : Oct. 2011
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AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
VDS=5V
7V
6V
125°C
25°C
Vgs=5V
2
3
4
5
6
7
8
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
20
18
16
14
12
10
8
2.2
2
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
VGS=10V
0.8
0
5
10
15
ID (A)
20
25
30
0
25
50
75
100 125 150 175 200
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
40
32
24
16
8
1.0E+02
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0 : Oct. 2011
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AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
VDS=50V
ID=20A
8
1600
1200
800
400
0
Ciss
6
4
Coss
2
Crss
0
0
4
8
12
16
20
0
20
40
60
80
100
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
800
600
400
200
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
100µs
DC
1ms
10ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
0.0001 0.001
0.01
0.1
1
100
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Operating
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOT298L and AOB298L (Note F)
Area for AOT298L and AOB298L
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT298L and AOB298L (Note F)
Rev0 : Oct. 2011
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Page 4 of 7
AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
100.0
10.0
1.0
800
600
400
200
0
10µs
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
100µs
1ms
DC
10ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
0.0001 0.001
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF298L
(Note F)
Figure 13: Single Pulse Power Rating Junction-to-Case for
AOTF298L (Note F)
10
In descending order
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4.5°C/W
1
0.1
P
T
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF298L (Note F)
40
30
20
10
0
50
40
30
20
10
0
0
0
25
50
75
100
TCASE (°C)
125
150
175
(Note
25
50
75
100
125
150
175
TCASE (°C)
Figure 16: Power De-rating for AOTF298L
F)
Figure 15: Current De-rating for AOTF298
F)
(Note
Rev0 : Oct. 2011
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AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
80
90
60
60
40
30
20
0
0
0
25
50
75
TCASE (°C)
100
125
150
175
0
25
50
75
100
TCASE (°C)
125
150
175
Figure 18: Power De-rating for AOT298L and
AOB298L (Note F)
Figure 17: Current De-rating for AOT298L and
AOB298L (Note F)
100
10000
1000
100
10
TA=25°C
TA=25°C
TA=100°C
TA=125°C
TA=150°C
10
1
1
10
100
0.00001
0.001
0.1
10
1000
Time in avalanche, tA (µs)
Pulse Width (s)
Figure 19: Single Pulse Avalanche capability
(Note C)
Figure 20: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=60°C/W
PD
0.01
Single Pulse
Ton
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0 : Oct. 2011
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Page 6 of 7
AOT298L/AOB298L/AOTF298L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev0 : Oct. 2011
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Page 7 of 7
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