AOZ8014DI [AOS]

4-Line EMI Filter with Integrated ESD Protection; 4线EMI滤波器,集成ESD保护
AOZ8014DI
型号: AOZ8014DI
厂家: ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述:

4-Line EMI Filter with Integrated ESD Protection
4线EMI滤波器,集成ESD保护

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中文:  中文翻译
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AOZ8014  
4-Line EMI Filter with Integrated ESD Protection  
General Description  
Features  
The AOZ8014 is an 4-line device integrating EMI filtering  
with ESD protection for each line. It is designed to  
suppress unwanted EMI/RFI signals and provide electro-  
static discharge (ESD) protection in portable electronic  
equipment. This state-of-the-art device utilizes AOS  
4 lines for EMI filtering and ESD protection:  
Exceeds IEC 61000-4-2, level 4 (ESD) immunity test  
±17kV (air discharge) and ±17kV (contact discharge)  
2
Trench Vertical Structure [TVS] ™ based technology  
2
used to achieve excellent ESD clamping & filter  
performance over the full operating display range  
leading edge Trench Vertical Structure [TVS] ™  
technology for superior clamping performance and filter  
attenuation over the full operating display range. The  
AOZ8014 has been optimized for protection of color LCD  
displays and CCD camera lines in cellular phones and  
other portable consumer electronic devices.  
Filter performance: -25db attenuation from 800MHz to  
3.0GHz  
Low operating voltage: 5.0V  
Capacitance stability over wide range of voltages and  
temperatures  
The AOZ8014 consists of four identical circuits  
comprised of TVS diodes for ESD protection, and a  
resistor–capacitor network for EMI/RFI filtering.  
A series resistor value of 100and a capacitance  
value of 17pF are used to achieve -25dB minimum  
attenuation from 800MHz to 3.0GHz. The TVS diodes  
provide effective suppression of ESD voltages in excess  
of ±17kV (air discharge) and ±17kV (contact discharge).  
This exceeds IEC 61000-4-2, level 4 ESD immunity test.  
DFN package, 2.0 x 2.0 mm  
Pb-Free device  
Applications  
EMI filtering and ESD protection for data lines  
LCD displays, camera interface, I/O interface  
Portable handheld devices, cell phones,  
PDA phones  
The AOZ8014 comes in an RoHS compliant, 2.0mm x  
2.0mm DFN package and is rated over a -40°C to +85°C  
ambient temperature range.  
RoHS  
Compliant  
Electrical Schematic (each channel)  
100Ω  
CHn  
(n = 1–4)  
17pF  
17pF  
GND  
Figure 1.  
Rev. 1.3 November 2008  
www.aosmd.com  
Page 1 of 6  
AOZ8014  
Ordering Information  
Part Number  
Ambient Temperature Range  
Package  
Environmental  
AOZ8014DI  
-40°C to +85°C  
DFN-8  
RoHS Compliant  
All AOS products are offered in packages with Pb-free plating and compliant to RoHS standards.  
Parts marked as Green Products (with “Lsuffix) use reduced levels of Halogens, and are also RoHS compliant.  
Please visit www.aosmd.com/web/quality/rohs_compliant.jsp for additional information.  
RoHS  
Compliant  
Pin Configuration  
1
2
3
4
8
7
6
5
8
7
6
5
1
2
3
4
DFN-8  
(Bottom View)  
Top View  
Pin Description  
Pin Number  
Pin Name  
Pin Function  
1, 8  
2, 7  
CH 1  
CH 2  
CH 3  
CH 4  
GND  
Channel 1 Connections  
Channel 2 Connections  
Channel 3 Connections  
Channel 4 Connections  
Common Ground Connection  
3, 6  
4, 5  
Exposed Pad  
Rev. 1.3 November 2008  
www.aosmd.com  
Page 2 of 6  
AOZ8014  
Absolute Maximum Ratings  
Exceeding the Absolute Maximum ratings may damage the device.  
Parameter  
Rating  
Storage Temperature (T )  
-65°C to +150°C  
±17kV  
S
(1)  
ESD Rating per IEC61000-4-2, contact  
(1)  
ESD Rating per IEC61000-4-2, air  
±17kV  
(2)  
ESD Rating per Human Body Model  
±30kV  
Notes:  
1. IEC 61000-4-2 discharge with C  
= 150pF, R  
= 330.  
Discharge  
Discharge  
2. Human Body Discharge per MIL-STD-883, Method 3015 C  
= 100pF, R  
= 1.5k.  
Discharge  
Discharge  
Electrical Characteristics  
T = 25°C unless otherwise specified.  
A
Symbol  
Parameter  
Conditions  
Min.  
Typ. Max. Units  
(3)(8)  
V
Reverse Working Voltage  
5.0  
8
V
V
RWM  
(4)  
V
Reverse Breakdown Voltage I = 1mA  
6
7
BR  
T
I
Reverse Leakage Current  
Signal Clamp Voltage  
V
= 3.3V  
0.1  
µA  
V
R
RWM  
(5)(8)  
(5)(8)  
V
I
I
= 12A, positive clamp  
7.5  
8.5  
CL  
LOAD  
= 12A, negative clamp  
-6.5  
-7.5  
LOAD  
R
C
Total Series Resistance  
Channel Capacitance  
Cut-off Frequency  
I = 20mA  
85  
15  
100  
17  
115  
19  
pF  
CH  
R
(6)(7)(8)  
Input to Ground  
CH  
f
Measured with 50source and 50load  
125  
MHz  
C
termination  
Attenuation from 800MHz  
to 3.0GHz  
Measured with 50source and 50load  
termination  
-25  
dB  
Notes:  
3. The working peak reverse voltage, V  
, should be equal to or greater than the DC or continuous peak operating voltage level.  
RWM  
4. V is measured at the pulse test current I .  
BR  
T
5. Measurements performed using a 100ns Transmission Line Pulse (TLP) system.  
6. Total capacitance is equal to 2 x C  
.
CH  
7. Measured at 25°C, V = 2.5V, f = 1.0MHz.  
R
8. Guaranteed by design.  
Rev. 1.3 November 2008  
www.aosmd.com  
Page 3 of 6  
AOZ8014  
Typical Performance Characteristics  
Typical Line Capacitance vs.  
Insertion Loss Characteristics  
Reverse Bias Voltage  
0
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
@ 0V Bias  
@ 5V Bias  
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
1
10  
100  
1000  
10000  
1
2
3
4
5
Frequency (MHz)  
Reverse Biased Voltage (V)  
Analog Crosstalk  
Clamping Voltage  
0
-20  
12.50  
10.00  
7.50  
-40  
-60  
-80  
5.00  
-100  
1
10  
100  
1000  
10000  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Frequency (MHz)  
Forward Voltage (V)  
Rev. 1.3 November 2008  
www.aosmd.com  
Page 4 of 6  
AOZ8014  
Package Dimensions, DFN 2.0 x 2.0 8L  
b
D
E
R
E1  
E
L
D1  
TOP VIEW  
BOTTOM VIEW  
c
A1  
A
Seating  
Plane  
SIDE VIEW  
Dimensions in millimeters  
Dimensions in inches  
Symbols Min.  
Nom. Max.  
Symbols Min.  
Nom. Max.  
A
A1  
b
0.70  
0.00  
0.18  
0.15  
0.75  
0.02  
0.80  
0.05  
0.30  
0.25  
A
A1  
b
0.028 0.030 0.031  
0.000 0.001 0.002  
0.007 0.010 0.012  
0.006 0.008 0.010  
0.079 BSC  
RECOMMENDED LAND PATTERN  
0.25  
0.50  
0.25  
c
0.20  
c
D
2.00 BSC  
1.50  
D
D1  
E
1.35  
0.75  
0.20  
1.60  
1.00  
0.40  
D1  
E
0.053 0.059 0.063  
0.079 BSC  
0.90 1.70  
2.00 BSC  
0.90  
E1  
e
E1  
e
0.030 0.035 0.039  
0.020 BSC  
0.50 BSC  
0.30  
0.30  
L
L
0.008 0.012 0.016  
0.008  
1.50  
R
0.20  
R
aaa  
bbb  
ccc  
ddd  
0.15  
aaa  
bbb  
ccc  
ddd  
0.006  
UNIT: mm  
0.10  
0.004  
0.10  
0.004  
0.08  
0.003  
Notes:  
1. Dimensions and tolerances conform to ASME Y14.5M-1994.  
2. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.  
3. Dimension b applied to metallized terminal and is measured between 0.10mm and 0.30mm from the terminal tip. If the terminal  
has the optional radius on the other end of the terminal, dimension b should not be measured in that radius area.  
4. Coplanarity ddd applies to the terminals and all other bottom surface metallization.  
Rev. 1.3 November 2008  
www.aosmd.com  
Page 5 of 6  
AOZ8014  
Part Marking  
AOZ8014DI  
(DFN-8)  
Assembly Lot Location  
Option Code  
AE2A  
8F13  
Part Code  
Underscore Denotes Green Product  
Assembly Lot Code  
Week Code  
Year Code  
This datasheet contains preliminary data; supplementary data may be published at a later date.  
Alpha & Omega Semiconductor reserves the right to make changes at any time without notice.  
LIFE SUPPORT POLICY  
ALPHA & OMEGA SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body or (b) support or sustain life, and (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury of  
the user.  
2. A critical component in any component of a life  
support, device, or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
Rev. 1.3 November 2008  
www.aosmd.com  
Page 6 of 6  

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