2N2131
更新时间:2024-09-18 18:38:29
品牌:APITECH
描述:Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin,
2N2131 概述
Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, 功率双极晶体管
2N2131 规格参数
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.46 |
Is Samacsys: | N | 最大集电极电流 (IC): | 30 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | JEDEC-95代码: | TO-114 |
JESD-30 代码: | O-MUPM-D3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 250 W | 最大功率耗散 (Abs): | 250 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
VCEsat-Max: | 1.3 V | Base Number Matches: | 1 |
2N2131 相关器件
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