BX6561 [APITECH]
Wide Band Low Power Amplifier, H1;
| 型号： | BX6561 |
| 厂家： | 
API Technologies Corp |
| 描述： | Wide Band Low Power Amplifier, H1 射频 微波 |
| 文件： | 总1页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Available as: TM6561, 4 Pin TO-8 (T4)
TN6561, 4 Pin Surface Mount (SM3)
RF AMPLIFIER
MODEL TM6561
FP6561, 4 Pin Flatpack (FP4)
BX6561, Connectorized Housing (H1)
Features
! High Output Power: +27 dBm Typical
! Bipolar Design
Typical Intermodulation Performance at 25 ºC
Second Order Harmonic Intercept Point ....... +60 dBm (Typ.)
Second OrderTwoTone Intercept Point ........ +55 dBm (Typ.)
Third OrderTwoTone Intercept Point ............ +40 dBm (Typ.)
!Environmental ScreeningAvailable
Specifications
Maximum Ratings
CHARACTERISTIC
TYPICAL
Ta= 25 ºC
10 - 500 MHz
MIN/MAX
Ta = -55 ºC to +85 ºC
10 - 500 MHz
Ambient OperatingTemperature ................-55ºC to +100 ºC
StorageTemperature .................................-62ºC to +125 ºC
CaseTemperature ..................................................+125 ºC
DCVoltage .......................................................... +16 Volts
Continuous RF Input Power .................................. +18 dBm
Short Term RF Input Power.... 100 Milliwatts (1 Minute Max.)
Maximum Peak Power .................... 0.5 Watt (3 µsec Max.)
Frequency
Gain (dB)
13
10 Min.
Power @ 1 dB
Comp. (dBm)*
Reverse
+27
-40
+25.5 Min.
-20 Max.
Isolation (dB)
VSWR
In
Out
1.7:1
1.7:1
5.5
2.0:1 Max.
2.0:1 Max.
9.0 Max.
Noise Figure (dB)
Power
Vdc
mA
+15
150
+15
160 Max.
Note: Care should always be taken to effectively ground the case of each unit.
RF Input is at D.C. ground -- no blocking capacitor.
* Power Output @ 1 dB is from 20 to 500 MHz.
Typical Performance Data
Legend
+ 25 ºC
+85 ºC - - - - - - -55 ºC
Rev.
3/24/08
Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532
Spectrum Microwave · 2707 Black Lake Place · Philadelphia, Pennsylvania 19154 · PH (215) 464-4000 · Fax (215) 464-4001
www.SpectrumMicrowave.com
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