QB-925 [APITECH]
Wide Band High Power Amplifier,;型号: | QB-925 |
厂家: | API Technologies Corp |
描述: | Wide Band High Power Amplifier, 高功率电源 射频 微波 |
文件: | 总1页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Model # QB-925
4 Watt Power Amplifier Driver
Class AB Power Amplifier Driver Utilizing GaN Technology Operates from 2-6 GHz
Features
• Latest Gallium Nitride (GaN) Device Technology
• Filtered Input (18 dB/Octave filter roll-off)
• Balanced Output Stage for Good Broadband Output Return Loss
• 3 Stage Amplifier with Internal Voltage Regulation
• Small Size (Chip & Wire)
• Connectorized or Printed Wiring Board Mount (solder attach 0.015” pins)
API Technologies’ Model QB-925 is a class AB power amplifier driver covering 2-6 GHz. This design utilizes the latest in
GaN technology for broadband communications. The QB-925 is a 3 stage amplifier design with internal voltage
regulation as well as balanced output stage for good broadband output return loss. All specification ratings are based
on measurements in a 50 Ω (ohm) system with a DC supply voltage tolerance of +/- 2%.
Technical Specifications
Notes:
Characteristic
Typical
2 – 6
Min/Max
2 – 6
1. Specifications are guaranteed when tested in a 50 Ohm system.
Specifications indicated as typical are not guaranteed.
Frequency (GHz)
Gain (dB)
18
20.5 / 21.9
2.0 Max.
2.0 Max.
40 / 58
2. Gate voltage must be sequenced ON before drain voltage is
applied to prevent damage to the unit.
Gain Variantion Over Temp (dB)
Gain Flatness (dB)
Reverse Isolation (dB)
+/- 1.5
+/- 1.5
Typical values are measured at 25°C, but not guaranteed.
In
VSWR
<1.5:1
<1.5:1
2.0:1 Max.
2.0:1 Max.
Out
Output Power @
3 dB Compression (dBm)
+38
+36 Min.
Outline Drawing
Noise figure (dB)
3.0
+20 to +28
350
3.5 Max.
+20 to +28
375 Max.
Vdc
Power
mA
Maximum Ratings (No Damage)
Ambient Operating Temperature
Storage Temperature
Vg
-40ºC to +85ºC
-65ºC to +175ºC
-10 Vdc
+32 Vdc
+29 dBm
VD (Drain Voltage @ +25 ºC
Input Drive
Rev Date: 4 2/2014
2/11/2014
Page # 1
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+1.888.553.7531
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