SF12N50D4 [APITECH]
Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN;
| 型号： | SF12N50D4 |
| 厂家： | 
API Technologies Corp |
| 描述： | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN 局域网 脉冲 晶体管 |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SF12N50D4
PRODUCT DATA SHEET
500 VOLT, 12 AMP N-CHANNEL MOSFET IN HERMETIC TO-254 PACKAGE
ABSOLUTE MAXIMUM RATINGS @ TC = 25°C, unless otherwise stated
Parameter
Rating
Units
BVDSS
Drain to Source Breakdown Voltage
Continuous Drain Current
500
12
V
A
ID @VGS = 10V, TC = 25°C
ID @VGS = 10V, TC = 100°C Continuous Drain Current
8
48
A
A
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Gate to Source Voltage
150
W
VGS
dv/dt
TJ
±20
V
Peak Diode Recovery dv/dt
Operating Junction Temperature
Storage Temperature
3.5
V/ns
°C
°C
°C
-55 to +150
-55 to +150
300
TSTG
Lead Temperature (0.063 in. from case for 10s)
ELECTRICAL CHARACTERISTICS @ T = 25°C, unless otherwise stated
J
Parameter
Min.
Typ. Max. Units Test Conditions
BVDSS
Drain to Source
Breakdown Voltage
Static Drain to Source On
State Resistance
Gate Threshold Voltage
500
-
-
V
W
V
VGS = 0V, ID = 1.0 mA
RDS(on)
-
-
0.415
0.515
4.0
VGS = 10V, ID = 8A
VGS = 10V, ID = 12A
VDS = VGS, ID = 250 µA
VGS(th)
gfs
2.0
6.5
-
-
Forward
-
VDS ³ 15V, IDS = 8A
Transconductance
Zero Gate Voltage
Drain Current
IDSS
25
VDS = 0.8 x Max. Rating, VGS = 0V
-
-
µA
250
VDS = 0.8 x Max. Rating
VGS = 0V, TJ = 125°C
IGSS
IGSS
Gate to Source Leakage
Forward
Gate to Source Leakage
Reverse
-
-
-
-
100
nA
nA
VGS = 20V
-100
VGS = -20V
Qg
Total Gate Charge
55
5
-
-
-
120
19
VGS = 10V, ID = 12A
Qgs
Qgd
Gate to Source Charge
Gate to Drain Charge
nC
VDS = Max. Rating X 0.5
27
70
FMI
•
530 Turnpike Street
•
North Andover, Massachusetts
•
Tel: 978.975.3385
•
Fax: 978.975.3506
SF12N50D4
PRODUCT DATA SHEET
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Min.
Typ. Max. Units Test Conditions
IS
Continuous Source
-
-
12
Current (Body Diode)
Pulsed Source Current
(Body Diode)
A
ISM
-
-
48
VSD
trr
Diode Forward Voltage
-
-
-
-
1.7
V
TJ = 25°C, IS = 12A, VGS = 0V
Reverse Recovery Time
1600
nS
TJ = 25°C, IF = 12A, di/dt £ 100A/µS
THERMAL RESISTANCE
Parameter
Min.
Typ. Max. Units Test Conditions
RthJC
RthCS
Junction-to-Case
Case-to-Sink
-
-
-
0.8
-
0.2
°C/W
RthJA
Junction-to-Ambient
-
-
48
MECHANICAL OUTLINE
0.540"
.040"
.050"
.144 DIA
0.800"
0.660"
0.540"
1
2
3
0.500"
.150"
.045"
.035"
.260"
.250"
.150"
PIN CONNECTION
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
FMI
•
530 Turnpike Street
•
North Andover, Massachusetts
•
Tel: 978.975.3385
•
Fax: 978.975.3506
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