首页 |元器件品牌

BTA12-600 [APOLLOELECTRON]

Standard Triac; 标准TRIAC
BTA12-600
型号： BTA12-600
厂家： Apollo Electron Co., Ltd.    Apollo Electron Co., Ltd.
描述：

Standard Triac
标准TRIAC

三端双向交流开关
文件： 总6页 (文件大小：1524K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
TF12A80  
Standard Triac  
TO-220F  
Symbol  
V
= 800V  
DRM  
○
2.T2  
I
= 12 A  
T(RMS)  
▼▲  
I
= 126A  
○
3.Gate  
TSM  
○
1.T1  
1
2
3
Features  
◆ Repetitive Peak Off-State Voltage : 800V  
◆ R.M.S On-State Current ( I  
= 1 A )  
T(RMS)  
◆ High Commutation dv/dt  
General Description  
This device is suitable for low power AC switching application, phase control application such as fan  
speed and temperature modulation control, lighting control and static switching relay where high sensi-  
tivity is required in all four quadrants.  
This device may substitute for BTA12-600, BTB12-600, BT138-600, BCR12CM12L, TM1261M/S series.  
Absolute Maximum Ratings ( Tj = 25°C unless otherwise specified )  
Symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
R.M.S On-State Current  
Condition  
Sine wave, 50 to 60 Hz  
Tj = 125 °C, Full Sine wave  
Ratings  
800  
Units  
V
A
12  
IT(RMS)  
One Cycle, 50Hz/60Hz, Peak,  
Non-Repetitive  
ITSM  
Surge On-State Current  
120/126  
A
I2t  
PG(AV)  
IGM  
tp = 10ms  
Tj=125°C  
Tj=125°C  
72  
I2t  
A2s  
W
Average Gate Power Dissipation  
Peak Gate Current  
1
2
A
TJ  
Operating Junction Temperature  
Storage Temperature  
- 40 ~ 125  
- 40 ~ 150  
°C  
°C  
TSTG  
July, 2010. Rev.2  
1/6  
copyright @ Apollo Electron Co., Ltd. All rights reserved.  
TF12A80  
Electrical Characteristics (Tj=25 °C unless otherwise specified)  
Ratings  
Typ.  
Symbol  
Items  
Conditions  
Unit  
Min.  
Max.  
V
D = VDRM, Single Phase, Half Wave  
Repetitive Peak Off-State  
Current  
IDRM  
VTM  
---  
---  
─
─
─
─
─
─
─
2 .0  
mA  
V
Tj = 125 °C  
---  
ITM = 17 A, tp=380㎲  
---  
Peak On-State Voltage  
1.55  
I+  
30  
Ⅰ
─
─
GT1  
I -  
V
V
D = 12V, RL=30 Ω  
Gate Trigger Current  
30  
30  
1.5  
1.5  
1.5  
-
mA  
Ⅱ
GT1  
I -  
Ⅲ
Ⅰ
─
GT3  
V+  
─
GT1  
V-GT1  
D = 12 V, RL=30 Ω  
Gate Trigger Voltage  
V
V
Ⅱ
─
V-GT3  
VGD  
Ⅲ
─
TJ = 125 °C, VD = VDRM RL=3.3kΩ  
Non-Trigger Gate Voltage  
0.2  
TJ = 125 °C  
Critical Rate of Rise Off-State  
Voltage  
dv/dt  
IH  
V/㎲  
mA  
─
─
VD=2/3 VDRM  
200  
Holding Current  
I =0.2A  
T
50  
─
--  
2/6  
TF12A80  
Fig 1. Gate Characteristics  
Fig 2. On-State Voltage  
102  
101  
100  
VGM (10V)  
101  
100  
10-1  
PGM (5W)  
TJ = 125oC  
PG(AV) (1W)  
25 ℃  
TJ = 25oC  
VGD (0.2V)  
101  
102  
103  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
On-State Voltage [V]  
Gate Current [mA]  
Fig 4. On State Current vs.  
Fig 3. On State Current vs.  
Allowable Case Temperature  
Maximum Power Dissipation  
16  
130  
120  
110  
100  
90  
θ = 180o  
θ = 150o  
14  
12  
10  
8
θ
π
π
2
θ = 120o  
θ = 90o  
θ = 60o  
θ
360°  
θ : Conduction Angle  
θ = 30o  
θ = 60o  
θ = 90o  
θ
θ = 30o  
π
π
2
6
θ
θ = 120o  
θ = 150o  
θ = 180o  
4
360°  
80  
θ : Conduction Angle  
2
0
70  
0
2
4
6
8
10  
12  
14  
0
2
4
6
8
10  
12  
14  
RMS On-State Current [A]  
RMS On-State Current [A]  
Fig 6. Gate Trigger Voltage vs.  
Junction Temperature  
Fig 5. Surge On-State Current Rating  
( Non-Repetitive )  
10  
200  
150  
100  
50  
V_  
60Hz  
GT3  
1
V+  
GT1  
V_  
GT1  
50Hz  
0
0.1  
-50  
100  
101  
102  
0
50  
100  
150  
Junction Temperature [ oC]  
Time (cycles)  
3/6  
TF12A80  
Fig 7. Gate Trigger Current vs.  
Junction Temperature  
Fig 8. Transient Thermal Impedance  
10  
10  
I+  
1
1
GT1  
I_  
GT1  
I_  
GT3  
0.1  
-50  
0.1  
10-2  
10-1  
100  
101  
102  
0
50  
100  
150  
Junction Temperature [ oC]  
Time (sec)  
4/6  
TF12A80  
TO-220F Package Dimension  
INCHES  
TYP  
10.08  
15.50  
3.00  
10.50  
1.08  
1.84  
MILLIMETERS  
Symbol  
MIN  
MAX  
10.28  
15.70  
3.05  
10.70  
1.20  
1.87  
0.90  
3.40  
4.55  
6.60  
0.61  
2.70  
2.93  
2.74  
MIN  
25.60  
39.37  
7.62  
26.67  
2.74  
4.67  
1.78  
8.13  
11.30  
16.26  
1.28  
6.35  
6.93  
6.45  
TYP  
26.11  
39.88  
7.75  
27.18  
3.05  
4.75  
2.29  
8.64  
11.56  
16.76  
1.54  
6.86  
7.44  
6.96  
A
B
C
D
E
F
G
H
I
9.88  
15.30  
2.95  
10.30  
0.95  
1.81  
0.50  
3.00  
4.35  
6.20  
0.41  
2.30  
2.53  
2.34  
25.10  
38.86  
7.49  
26.16  
2.41  
4.60  
1.27  
7.62  
11.05  
15.75  
1.03  
5.84  
6.43  
0.70  
3.20  
4.45  
6.40  
0.51  
2.50  
2.73  
2.54  
J
K
L
M
N
5.94  
5/6  
TF12A80  
TO-220F Package Dimension, Forming  
mm  
Inch  
Typ.  
Dim.  
Min.  
10.4  
6.18  
9.55  
8.4  
6.05  
1.26  
3.17  
1.87  
2.57  
Typ.  
Max.  
10.6  
6.44  
9.81  
8.66  
6.15  
1.36  
3.43  
2.13  
2.83  
Min.  
Max.  
0.417  
0.254  
0.386  
0.341  
0.242  
0.054  
0.135  
0.084  
0.111  
A
B
0.409  
0.243  
0.376  
0.331  
0.238  
0.050  
0.125  
0.074  
0.101  
C
D
E
F
G
H
I
J
2.54  
5.08  
0.100  
0.200  
K
L
2.51  
1.23  
0.45  
0.65  
2.62  
1.36  
0.63  
0.78  
0.099  
0.048  
0.018  
0.0025  
0.103  
0.054  
0.025  
0.031  
M
N
O
P
5.0  
3.7  
3.2  
1.5  
0.197  
0.146  
0.126  
0.059  
φ
φ 1  
φ 2  
A
E
I
H
L
F
B
C
φ
φ 1  
φ 2  
G
M
1
2
3
D
1. T1  
2. T2  
N
3. Gate  
O
J
P
K
6/6  

相关型号：

BTA12-600AW

 TRIAC|600V V(DRM)|12A I(T)RMS|TO-220
ETC

BTA12-600B

 12A TRIACS
STMICROELECTR

BTA12-600B

 Bi-Directional Triode Thyristor
SEMIWELL

BTA12-600B

 Triacs
ISC

BTA12-600B

 12A TRIACS
TGS

BTA12-600B

 12A TRIACs
JIEJIE

BTA12-600B

 TRIAC
COMSET

BTA12-600B

 Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated
NJSEMI

BTA12-600B/F2

 600V, 12A, TRIAC, TO-220, 3 PIN
STMICROELECTR

BTA12-600B/F5

 600V, 12A, TRIAC, TO-220AB, TO-220, 3 PIN
STMICROELECTR

BTA12-600BF

 12A TRIACS
TGS

BTA12-600BRG

 12A TRIACS
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明