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BTB08-600 [APOLLOELECTRON]

Standard Triac; 标准TRIAC
BTB08-600
型号： BTB08-600
厂家： Apollo Electron Co., Ltd.    Apollo Electron Co., Ltd.
描述：

Standard Triac
标准TRIAC

三端双向交流开关
文件： 总6页 (文件大小：3302K)
中文：  中文翻译
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TF8A80  
Standard Triac  
TO-220F  
Symbol  
○
2.T2  
V
= 800V  
DRM  
I
= 8 A  
T(RMS)  
▼▲  
○
3.Gate  
I
= 84A  
TSM  
○
1.T1  
1
2
3
Features  
◆ Repetitive Peak Off-State Voltage : 800V  
◆ R.M.S On-State Current ( I  
=8 A )  
T(RMS)  
◆ High Commutation dv/dt  
General Description  
This device is fully isolated p ackage suitable for AC switching application, phase control application  
such as fan speed and temperature modulation control, lighting control and static switching relay.  
This device may substitute for BTA08-600, BTB08-600, BT137-600, BCR8PM-12, TM861M/S-L series.  
Absolute Maximum Ratings ( Tj = 25°C unless otherwise specified )  
Symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
R.M.S On-State Current  
Condition  
Since wave, 50 to 60Hz  
Tj = 125°C , Full Sine wave  
Ratings  
Units  
800  
V
8
.0  
IT(RMS)  
A
One Cycle, 50Hz/60Hz, Peak,  
Non-Repetitive  
ITSM  
Surge On-State Current  
80/84  
A
I2t  
PG(AV)  
IGM  
32  
A2  
W
A
I2t  
tp=10ms  
s
Average Gate Power Dissipation  
Tj=125 °C  
1
Peak Gate Current  
Tj=125 °C  
2
TJ  
Operating Junction Temperature  
Storage Temperature  
- 40 ~ 125  
- 40 ~ 150  
°C  
°C  
TSTG  
July, 2010. Rev.2  
1/6  
copyright @ Apollo Electron Co., Ltd. All rights reserved.  
TF8A80  
Electrical Characteristics (Tj=25 °C unless otherwise specified)  
Ratings  
Typ.  
Symbol  
Items  
Conditions  
Unit  
Min.  
Max.  
V
D = VDRM, Single Phase, Half Wave  
Repetitive Peak Off-State  
Current  
IDRM  
VTM  
mA  
─
---  
─
─
─
─
─
─
2
Tj = 125 °C  
ITM = 11 A, TP=380㎲  
Peak On-State Voltage  
1.55  
30  
V
─
─
─
─
─
─
I+  
Ⅰ
GT1  
I -  
V
V
D = 12 V, RL=30 Ω  
Gate Trigger Current  
30  
mA  
Ⅱ
GT1  
I -  
30  
Ⅲ
Ⅰ
GT3  
V+  
1.5  
1.5  
1.5  
─
GT1  
V-GT1  
D =12 V, RL=30 Ω  
Gate Trigger Voltage  
V
V
Ⅱ
V-GT3  
VGD  
Ⅲ
─
─
Tj= 125 °C, VD = VDRM,  
R
3.3K Ω  
L=  
Non-Trigger Gate Voltage  
0.2  
---  
Tj = 125 °C,  
Critical Rate of Rise Off-State  
Voltage  
dv/dt  
IH  
200  
--  
--  
V/㎲  
VD=2/3 VDRM  
Holding Current  
I =0.2A  
T
--  
mA  
--  
50  
2/6  
TF8A80  
Fig 1. Gate Characteristics  
Fig 2. On-State Voltage  
102  
101  
100  
VGM (10V)  
101  
100  
10-1  
PGM (5W)  
TJ = 125oC  
PG(AV) (1W)  
25 ℃  
TJ = 25oC  
VGD (0.2V)  
101  
102  
103  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
On-State Voltage [V]  
Gate Current [mA]  
Fig 4. On State Current vs.  
Allowable Case Temperature  
Fig 3. On State Current vs.  
Maximum Power Dissipation  
130  
120  
110  
100  
90  
10  
9
8
7
6
5
4
3
2
1
0
θ = 180o  
θ = 150o  
θ = 120o  
θ
π
π
2
θ
θ = 90o  
θ = 60o  
360°  
θ = 30o  
θ : Conduction Angle  
θ = 30o  
θ = 60o  
θ
π
π
2
θ = 90o  
θ
θ = 120o  
θ = 150o  
θ = 180o  
360°  
θ : Conduction Angle  
80  
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
RMS On-State Current [A]  
RMS On-State Current [A]  
Fig 6. Gate Trigger Voltage vs.  
Junction Temperature  
Fig 5. Surge On-State Current Rating  
( Non-Repetitive )  
10  
100  
80  
60  
40  
20  
0
V+  
60Hz  
GT1  
V_  
GT1  
V_  
1
GT3  
50Hz  
0.1  
-50  
100  
101  
102  
0
50  
100  
150  
Junction Temperature [ oC]  
Time (cycles)  
3/6  
TF8A80  
Fig 7. Gate Trigger Current vs.  
Junction Temperature  
Fig 8. Transient Thermal Impedance  
10  
10  
I+  
1
1
GT1  
I_  
GT1  
I_  
GT3  
0.1  
-50  
0.1  
10-2  
10-1  
100  
101  
102  
0
50  
100  
150  
Junction Temperature [ oC]  
Time (sec)  
4/6  
TF8A80  
TO-220F Package Dimension  
INCHES  
TYP  
10.08  
15.50  
3.00  
10.50  
1.08  
1.84  
MILLIMETERS  
MIN  
Symbol  
MIN  
MAX  
10.28  
15.70  
3.05  
10.70  
1.20  
1.87  
0.90  
3.40  
4.55  
6.60  
0.61  
2.70  
2.93  
2.74  
TYP  
26.11  
39.88  
7.75  
27.18  
3.05  
4.75  
2.29  
8.64  
11.56  
16.76  
1.54  
6.86  
7.44  
6.96  
A
B
C
D
E
F
G
H
I
9.88  
15.30  
2.95  
10.30  
0.95  
1.81  
0.50  
3.00  
4.35  
6.20  
0.41  
2.30  
2.53  
2.34  
25.10  
38.86  
7.49  
26.16  
2.41  
4.60  
1.27  
7.62  
11.05  
15.75  
1.03  
5.84  
6.43  
25.60  
39.37  
7.62  
26.67  
2.74  
4.67  
1.78  
8.13  
11.30  
16.26  
1.28  
6.35  
6.93  
0.70  
3.20  
4.45  
6.40  
0.51  
2.50  
2.73  
2.54  
J
K
L
M
N
5.94  
6.45  
5/6  
TF8A80  
TO-220F Package Dimension, Forming  
mm  
Inch  
Typ.  
Dim.  
Min.  
10.4  
6.18  
9.55  
8.4  
6.05  
1.26  
3.17  
1.87  
2.57  
Typ.  
Max.  
10.6  
6.44  
9.81  
8.66  
6.15  
1.36  
3.43  
2.13  
2.83  
Min.  
Max.  
0.417  
0.254  
0.386  
0.341  
0.242  
0.054  
0.135  
0.084  
0.111  
A
B
0.409  
0.243  
0.376  
0.331  
0.238  
0.050  
0.125  
0.074  
0.101  
C
D
E
F
G
H
I
J
2.54  
5.08  
0.100  
0.200  
K
L
2.51  
1.23  
0.45  
0.65  
2.62  
1.36  
0.63  
0.78  
0.099  
0.048  
0.018  
0.0025  
0.103  
0.054  
0.025  
0.031  
M
N
O
P
5.0  
3.7  
3.2  
1.5  
0.197  
0.146  
0.126  
0.059  
φ
φ 1  
φ 2  
A
E
I
H
L
F
B
C
φ
φ 1  
φ 2  
G
M
1
2
3
D
1. T1  
2. T2  
N
3. Gate  
O
J
P
K
6/6  

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