MT200DT18L2 [APTSEMI]
Three Phase Bridge Thyristor;
| 型号： | MT200DT18L2 |
| 厂家： | 
Jiangsu APT Semiconductor Co.,Ltd |
| 描述： | Three Phase Bridge Thyristor |
| 文件： | 总5页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MT200DT18L2
Three Phase Bridge
+ Thyristor
VRRM / VDRM
IFAV / ITAV
800 to 1800V
200Amp
Features
y
y
y
Blocking voltage:800 to 1800V
Three Phase Bridge and a Thyristor
Low Forward Voltage
Circuit
-
G
R2
Applications
y
y
y
y
Inverter for AC or DC motor control
Current stablilzed power supply
Switching power supply
R
S T
UL recognized applied for file no. E360040
Module Type
TYPE
VRRM / VDRM
800V
VRSM
900V
1300V
1700V
1900V
MT200DT08L2
MT200DT12L2
MT200DT16L2
MT200DT18T2
1200V
1600V
1800V
◆Diode
Maximum Ratings
Symbol
Item
Conditions
Tc=96℃Three phase full wave
t=10mS Tvj =45℃
Values
Units
A
ID
IFSM
i2t
Output Current(D.C.)
200
Surge forward current
1900
A
A2s
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
18050
Visol
Tvj
a.c.50HZ;r.m.s.;1min
3000
V
-40 to +150
-40 to +125
2±15%
5±15%
5±15%
320
℃
Tstg
Mt
℃
Mounting Torque
To terminals(M4)
Nm
Nm
Nm
g
Mt
To terminals(M6)
Ms
To heatsink(M6)
Weight
Module（Approximately）
Thermal Characteristics
Symbol
Item
Conditions
Junction to Case(TOTAL)
Case to Heat sink
Values
0.12
Units
℃/W
Thermal Impedance, max.
Rth(j-c)
Rth(c-s) Thermal Impedance, max.
0.06
℃/W
Electrical Characteristics
Symbol
Item
Conditions
Values
Units
VFM
Forward Voltage Drop, max.
T=25℃IF =200A
1.35
V
Tvj =25℃VRD=VRRM
Tvj =150℃VRD=VRRM
Repetitive Peak Reverse Current,
max.
≤2
≤10
mA
mA
IRRM
Document Number: S-M0066
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MT200DT18L2
◆Thyristor
Maximum Ratings
Symbol
Item
Conditions
Values
Units
Tc=93℃, Single Phase half wave
ITAV
Average On-State Current
200
A
180o conduction
TVJ=45℃ t=10ms (50Hz), sine
VR=0
ITSM
Surge On-State Current
1900
A
i2t
Visol
Tvj
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
18050
3000
A2s
V
a.c.50HZ;r.m.s.;1 min
-40 to +125
-40 to +125
2±15%
℃
Tstg
Mt
℃
Mounting Torque
To terminals(M4)
To terminals(M6)
To heatsink(M6)
Nm
Mt
5±15%
Ms
5±15%
Nm
Critical Rate of Rise of On-State
Current
TVJ=TVJM, VD=1/2VDRM ,IG =100mA
diG/dt=0.1A/μs
di/dt
200
500
A/μs
Critical Rate of Rise of Off-State
Voltage, min.
TJ=TVJM,VD=2/3VDRM,linear voltage
rise
dv/dt
V/μs
Electrical and Thermal Characteristics
Values
Min. Typ. Max.
Symbol
Item
Conditions
Units
VTM
Peak On-State Voltage, max.
T=25℃ IT =200A
1.40
V
Repetitive Peak Reverse Current,
IRRM/IDRM max. / Repetitive Peak Off-State
Current, max.
TVJ=TVJM ,VR=VRRM ,VD
=VDRM
100
mA
VGT
IGT
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Thermal Impedance, max.
TVJ =25℃ , VD =6V
TVJ =25℃ , VD =6V
Junction to Case
Case to Heatsink
3
V
150
0.14
0.06
mA
Rth(j-c)
℃/W
℃/W
Rth(c-s) Thermal Impedance, max.
Document Number: S-M0066
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT200DT18L2
Performance Curves
550
500
W
250
A
Three phase
Three phase
200
400
300
200
100
150
100
50
ID
Pvtot
0
0
0
ID
40
80
120
160
A
200
0
Tc
50
100
℃
150
Fig1. Power dissipation
Fig2. Forward Current Derating Curve
2500
0.20
50HZ
A
℃/ W
2000
1500
1000
500
0
Zth(j-C)
Per one element
0.10
Single phase half wave
Tj=25℃ start
0
1
10
cycles 100
0.001
t
0.01
0.1
1.0
10
S 100
Fig4. Max Non-Repetitive Forward Surge
Current
Fig3. Transient thermal impedance
1000
250
W
max.
A
200
150
100
50
100
IF
Tj=25℃
PTAV
0
10
0.5 VF
1.0
1.5
2.0
V
2.5
0
ID
40
80
120
160
A
200
Fig5. Forward Characteristics
Fig6. SCR Power dissipation
www.apt-semi.com
Document Number: S-M0066
Rev.1.0, May.31, 2013
3
MT200DT18L2
250
A
0.20
℃/ W
200
Zth(j-C)
150
0.10
100
50
ITAVM
0
0
0.001
t
0.01
0.1
1.0
10
S 100
0
Tc
50
100
℃
150
Fig8. SCR Transient thermal impedance
Fig7. SCR Forward Current Derating Curve
102
V
1000
max.
A
Peak Forward Gate Voltage (10V)
101
100
100
-10℃
135℃
IT
VG
25℃
Maximum Gate Non-Trigger Voltage
Tj=25℃
10
0.1
101 IG
102
103
mA 104
0.5 VTM
1.0
1.5
2.0
V
2.5
Fig9. SCR Forward Characteristics
Fig10. Gate trigger Characteristics
Document Number: S-M0066
Rev.1.0, May.31, 2013
www.apt-semi.com
4
MT200DT18L2
Package Outline Information
CASE: L2
Dimensions in mm
Document Number: S-M0066
Rev.1.0, May.31, 2013
www.apt-semi.com
5
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