MT275CB16T3 [APTSEMI]

Thyristor Modules;
MT275CB16T3
型号: MT275CB16T3
厂家: Jiangsu APT Semiconductor Co.,Ltd    Jiangsu APT Semiconductor Co.,Ltd
描述:

Thyristor Modules

文件: 总3页 (文件大小:407K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MT275CB18T3  
Thyristor Modules  
VRRM / VDRM 800 to 1800V  
ITAV  
275A  
Applications  
y
y
y
y
Power Converters  
Lighting Control  
DC Motor Control and Drives  
Heat and temperature control  
Circuit  
Features  
y
y
y
International standard package  
High Surge Capability  
Simple Mounting  
Module Type  
TYPE  
VRRM  
800V  
1200V  
1600V  
1800V  
VRSM  
900V  
1300V  
1700V  
1900V  
MT275CB08T3  
MT275CB12T3  
MT275CB16T3  
MT275CB18T3  
Maximum Ratings  
Symbol  
Conditions  
Values  
Units  
ITAV  
Sine 180o;Tc=85  
275  
A
ITSM  
i2t  
TVJ =45t=10ms, sine  
8000  
A
TVJ =45t=10ms, sine  
320000  
A2s  
Visol  
Tvj  
a.c.50HZ;r.m.s.;1min  
2500  
V
-40 to 125  
-40 to 125  
Tstg  
TVJ= TVJM , 2/3VDRM ,IG =500mA  
Tr<0.5us,tp>6us  
di/dt  
150  
A/us  
V/us  
dv/dt  
TJ= TVJM ,2/3VDRM, linear voltage rise  
Module(Approximately)  
1000  
Weight  
600  
g
Thermal Characteristics  
Symbol  
Rth(j-c)  
Conditions  
per module  
per module  
Values  
0.13  
Units  
/W  
Rth(c-s)  
0.03  
/W  
Document Number: S-M0053  
Rev.1.0, May.31, 2013  
www.apt-semi.com  
1
MT275CB18T3  
Electrical Characteristics  
Symbol  
Values  
Units  
Conditions  
Min.  
Typ.  
Max.  
1.6  
VTM  
VF  
T=25ITM =750A  
T=25ITM =750A  
V
V
1.3  
IRRM/IDRM  
PGM  
IGM  
TVJ =TVJM ,VR=VRRM ,VD=VDRM  
30  
mA  
W
12  
3
A
VGT  
IGT  
TVJ =25, VD =6V  
TVJ =25, VD =6V  
TVJ =25, RG = 33  
TVJ =25, VD =6V  
2
V
150  
mA  
mA  
mA  
IL  
400  
200  
IH  
Performance Curves  
400  
W
1000  
A
cont  
800  
rec.180  
sin.180  
300  
rec.120  
rec.90  
Typ.  
600  
rec.60  
rec.30  
200  
100  
400  
200  
IT  
Max  
25  
- - -125℃  
PTAV  
0
0
ITAV  
100  
200  
A 300  
0
VTM  
0.5  
1.0  
1.5  
V
2.0  
Fig1. Power dissipation  
Fig2.Forward Characteristics  
0.2  
50HZ  
8000  
A
/ W  
Zth(j-C)  
0.1  
4000  
0
0
0.001  
t
0.01  
0.1  
1
10  
S 100  
10  
100  
ms 1000  
Fig3. Transient thermal impedance  
Fig4. Max Non-Repetitive Forward Surge  
Current  
Document Number: S-M0053  
Rev.1.0, May.31, 2013  
www.apt-semi.com  
2
MT275CB18T3  
100  
V
1/2·MT275CB18T3  
10  
1
VG  
0.1  
0.001 IG  
0.01  
0.1  
1
10  
A
100  
Fig5. Gate trigger Characteristics  
Package Outline Information  
CASE: T3  
Dimensions in mm  
Document Number: S-M0053  
Rev.1.0, May.31, 2013  
www.apt-semi.com  
3

相关型号:

MT275CB18T3

Thyristor Modules
APTSEMI

MT27C210-20

x16 EPROM
ETC
MICRON

MT28800

Accessories Multimode Relay MT
TE

MT28C3212P2FL

FLASH AND SRAM COMBO MEMORY
MICRON

MT28C3212P2NFL

FLASH AND SRAM COMBO MEMORY
MICRON

MT28C3214P2FL

FLASH AND SRAM COMBO MEMORY
MICRON

MT28C3214P2NFL

FLASH AND SRAM COMBO MEMORY
MICRON

MT28C3224P18

FLASH AND SRAM COMBO MEMORY
MICRON

MT28C3224P20

FLASH AND SRAM COMBO MEMORY
MICRON

MT28C6428P18

FLASH AND SRAM COMBO MEMORY
MICRON

MT28C6428P20

FLASH AND SRAM COMBO MEMORY
MICRON