MBR10100 [ASEMI]
MBR1080 THUR MBR10100Dual High-Voltage Schottky Rectifiers; MBR1080周四MBR10100Dual高压肖特基整流器
| 型号： | MBR10100 |
| 厂家： | 
ASEMI |
| 描述： | MBR1080 THUR MBR10100Dual High-Voltage Schottky Rectifiers |
| 文件： | 总3页 (文件大小：518K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1080 THUR MBR10100
Dual High-Voltage Schottky Rectifiers
REV:1.01
◆ Half Bridge Rectified、Common Cathode Structure.
◆ Multilayer Metal -Silicon Potential Structure.
◆ Low Power Waste，High Efficiency.
Typical Reference
Data
VRRM= 80V
IF(AV)= 10A
◆ Beautiful High Temperature Character.
◆ Have Over Voltage protect loop，high reliability.
◆ RoHs Product.
VRRM= 90V
IF(AV)= 10A
● Low Voltage High Frequency Switching Power Supply.
● Low Voltage High Frequency Invers Circuit.
VRRM= 100V
IF(AV)= 10A
● Low Voltage Continued Circuit and Protection Circuit.
■ MBR1080、MBR1090、MBR10100 Schottky diode,in the
manufacture uses the main process technology includes:
Silicon epitaxial substrate, P+ loop technology,The
potential metal and the silicon alloy technology, the
device uses the two chip, the common cathode, the plastic
package structure.
Polarity
Absolute Maximum Ratings
Item
Maximal Inverted Repetitive Peak Voltage
Maximal DC Interdiction Voltage
MBR10100
100
Symbol MBR1080 MBR1090
Unit
V
V
VRRM
VDC
80
80
90
90
100
Average Rectified Forward Current TC=150℃
Device
Whole
10
5
IFAV
A
Unilateral
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
150
IFSM
A
Operating Junction Temperature
Storage Temperature
-40- +175
-40- +175
TJ
℃
℃
TSTG
Electricity Character
Represent
ative
Test Condition
Item
Minimum
MBR1080 MBR1090MBR10100 Unit
100
TJ =25℃
TJ =125℃
VF TJ =25℃
uA
mA
V
IR
VR=VRRM
IF=5A
1
0.84 0.85 0.86
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MBR1080 THUR MBR10100
Dual High-Voltage Schottky Rectifiers
REV:1.01
The forward voltage and forward current curve
The reverse leak current and the reverse
voltage (single-device) curve
Current Derating Curve, Per Eleme
nt
The crunode capacitance curve
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Page2
MBR1080 THUR MBR10100
Dual High-Voltage Schottky Rectifiers
REV:1.01
ITO-220AB
注意事项：
1. 以金属螺丝(规格4-40)并加4.9mm直径金属垫片，将ITO-220AB自螺丝孔锁
在金属散热片上。
2 XXXX代表日期码，第一码表示公元年的最后一码，第二码表示生产时当月码
（A,B,C⋯.为一月，二月，三月⋯),第三，四码表示大量生产时批次码。
例如:2009年第一月生产的，D/C为9AXX。
MBR10100
XXXX
3. 包装及出货:ROHS,50PCS/管,1K/BOX,5K(5K BOXEX)/CARTON, BOXEX及CARTON。
修订内容
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Page3
相关型号：
MBR10100-BP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
MBR10100-G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
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