MBR30100 [ASEMI]
Dual High-Voltage Schottky Rectifiers; 双高压肖特基整流器
| 元器件型号： | MBR30100 |
| 生产厂家： | 
??ASEMI
|
| 描述和应用： | Dual High-Voltage Schottky Rectifiers |
| PDF文件： | 总3页 (文件大小：515K) |
| 下载文档： | 下载PDF数据表文档文件 |
| 型号参数：MBR30100参数 | |
| 是否Rohs认证 | 符合 |
| 生命周期 | Active |
| 包装说明 | R-PSFM-T3 |
| Reach Compliance Code | compliant |
| 风险等级 | 5.6 |
| 其他特性 | FREE WHEELING DIODE |
| 应用 | GENERAL PURPOSE |
| 外壳连接 | CATHODE |
| 配置 | COMMON CATHODE, 2 ELEMENTS |
| 二极管元件材料 | SILICON |
| 二极管类型 | RECTIFIER DIODE |
| 最大正向电压 (VF) | 1.05 V |
| JEDEC-95代码 | TO-247AD |
| JESD-30 代码 | R-PSFM-T3 |
| 最大非重复峰值正向电流 | 150 A |
| 元件数量 | 2 |
| 相数 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 最大重复峰值反向电压 | 100 V |
| 最大反向电流 | 1000 µA |
| 表面贴装 | NO |
| 技术 | SCHOTTKY |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
MBR3080 THUR MBR30100
Dual High-Voltage Schottky Rectifiers
REV:1.01
◆ Half Bridge Rectified、Common Cathode Structure.
Productor
Character
◆ Multilayer Metal -Silicon Potential Structure.
◆ Low Power Waste，High Efficiency.
◆ Beautiful High Temperature Character.
◆ Have Over Voltage protect loop，high reliability.
◆ RoHs Product.
Typical Reference
Data
VRRM= 80V
IF(AV)= 30A
VRRM= 90V
IF(AV)= 30A
Primary Use
● Low Voltage High Frequency Switching Power Supply.
● Low Voltage High Frequency
● Low Voltage Continued
Invers Circuit.
VRRM= 100V
IF(AV)= 30A
Circuit and Protection Circuit.
■ MBR3080、MBR3090、MBR30100 Schottky diode,in the
manufacture uses the main process technology includes:
Silicon epitaxial substrate, P+ loop technology,The
potential metal and the silicon alloy technology, the
device uses the two chip, the common cathode, the plastic
package structure.
Absolute Maximum Ratings
Item
Maximal Inverted Repetitive Peak Voltage
Maximal DC Interdiction Voltage
Average Rectified Forward Current TC=150℃
Device
Unilateral
Whole
Summarize
Polarity
Symbol
VRRM
VDC
IFAV
MBR3080 MBR3090 MBR30100 Unit
80
90
100
V
80
90
100
V
20
10
A
A
℃
℃
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
Operating Junction Temperature
Storage Temperature
IFSM
TJ
TSTG
150
-40- +175
-40- +175
Electricity Character
Item
IR
VF
Test
TJ =25℃
TJ =125℃
TJ =25℃
Condition
VR=VRRM
IF=15A
Minimum
Represent
MBR3080 MBR3090 MBR30100 Unit
ative
100
uA
1
0.82
0.84
0.86
mA
V
www.asemi.tw
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1
MBR3080 THUR MBR30100
Dual High-Voltage Schottky Rectifiers
REV:1.01
The forward voltage and forward current curve
The reverse leak current and the reverse
voltage (single-device) curve
Current Derating Curve, Per Eleme nt
The crunode capacitance curve
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MBR3080 THUR MBR30100
Dual High-Voltage Schottky Rectifiers
REV:1.01
ITO-220AB
注意事项：
1. 以金属螺丝(规格4-40)并加4.9mm直径金属垫片，将ITO-220AB自螺丝孔锁
在金属散热片上。
2 XXXX代表日期码，第一码表示公元年的最后一码，第二码表示生产时�½�月码
（A,B,C⋯.为一月，二月，三月⋯),第三，四码表示大量生产时批次码。
例如:2009年第一月生产的，D/C为9AXX。
3. 包装及出货:ROHS,50PCS/管,1K/BOX,5K(5K BOXEX)/CARTON, BOXEX及CARTON。
MBR30100
XXXX
修订内容
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