MR752 [ASEMI]
High Current Lead Mounted Rectifiers; 大电流引线安装整流器
| 型号： | MR752 |
| 厂家： | 
ASEMI |
| 描述： | High Current Lead Mounted Rectifiers |
| 文件： | 总5页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MR754 to MR760
MR754 and MR760 are Preferred Devices
High Current Lead
Mounted Rectifiers
Features
• Current Capacity Comparable to Chassis Mounted Rectifiers
• Very High Surge Capacity
• Insulated Case
HIGH CURRENT
LEAD MOUNTED
SILICON RECTIFIERS
50 − 1000 VOLTS
• Pb−Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 2.5 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead
is Readily Solderable
DIFFUSED JUNCTION
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode Polarity Band
AXIAL LEAD
BUTTON
CASE 194
STYLE 1
A
D
MARKING DIAGRAM
1
K
G
MR7xx
G
B
K
2
MR7 = Device Code
xx
= 50, 51, 52, 54, 56 or 60
NOTES:
= Pb−Free Package
1. CATHODE SYMBOL ON PACKAGE.
2. 194−01 OBSOLETE, 194−04 NEW
STANDARD.
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
A
B
D
K
8.43
5.94
1.27
8.69 0.332 0.342
6.25 0.234 0.246
1.35 0.050 0.053
Preferred devices are recommended choices for future use
and best overall value.
25.15 25.65 0.990 1.010
STYLE 1:
PIN 1. CATHODE
2. ANODE
©
ASemiconductor Technology Co.,Ltd.
1
Publication Order Number:
March, 2012 − Rev. 6
MR750/D
MR750 SERIES
MAXIMUM RATINGS
Characteristic
Symbol
MR750 MR751 MR752 MR754 MR756 MR760
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
50
100
200
400
600
1000
V
RRM
RWM
R
Non−Repetitive Peak Reverse Voltage
(Halfwave, single phase, 60 Hz peak)
V
60
35
120
70
240
140
480
280
720
420
1200
700
V
RSM
RMS Reverse Voltage
V
V
A
R(RMS)
Average Rectified Forward Current
(Single phase, resistive load, 60 Hz)
(See Figures 5 and 6)
I
22 (T = 60°C, 1/8 in Lead Lengths)
6.0 (T = 60°C, P.C. Board mounting)
O
L
A
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions)
I
A
FSM
400 (for 1 cycle)
Operating and Storage Junction
Temperature Range
T , T
°C
J
stg
*65 to +175
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic and Conditions
Symbol
Max
1.25
0.90
Unit
V
Maximum Instantaneous Forward Voltage Drop (i = 100 A, T = 25°C)
v
F
J
F
Maximum Forward Voltage Drop (I = 6.0 A, T = 25°C, 3/8 in leads)
V
V
F
A
F
Maximum Reverse Current
(Rated DC Voltage)
T = 25°C
T = 100°C
J
I
25
1.0
ꢀ A
mA
J
R
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2
MR750 SERIES
700
500
600
V
MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE T
RRM
T = 25°C
J
J
400
300
NOTED IS T PRIOR TO SURGE
J
300
200
MAXIMUM
25°C
TYPICAL
175°C
25°C
200
T = 175°C
J
100
70
100
80
50
60
30
20
1.0
2.0
5.0
10
20
50
100
NUMBER OF CYCLES AT 60 Hz
Figure 2. Maximum Surge Capability
10
7.0
5.0
+0.5
0
3.0
2.0
TYPICAL RANGE
−0.5
−1.0
1.0
0.7
0.5
−1.5
−2.0
0.3
0.2
0.2
0.5
1.0 2.0
5.0
10
20
50 100 200
0.6 0.8
1.0 1.2 1.4 1.6 1.8 2.0 2.2
2.4 2.6
v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
i , INSTANTANEOUS FORWARD CURRENT (AMP)
F
Figure 3. Forward Voltage Temperature Coefficient
Figure 1. Forward Voltage
20
10
1/2"
3/8"
L
L
1/4"
1/8"
5.0
HEAT SINK
3.0
2.0
Both leads to heat sink, with lengths as shown. Variations in R
ꢁ
J
L
(
t
)
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about 20% from the values shown. Val-
ues for times greater than 2.0 seconds may be obtained by drawing
a curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
1.0
0.5
typical or maximum values may be used. For R
values at pulse
widths less than 0.1 second, the above curve can be extrapolated
ꢁ
J
L
(
t
)
0.3
0.2
down to 10 ꢀs at a continuing slope.
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50 70
t, TIME (SECONDS)
Figure 4. Typical Transient Thermal Resistance
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3
MR750 SERIES
28
24
20
16
12
8.0
4.0
0
7.0
R
= 25°C/W
ꢁ
JA
RESISTIVE INDUCTIVE
LOADS
L = 1/8"
1/4"
SEE NOTE
RESISTIVE INDUCTIVE LOADS
CAPACITANCE LOADS − 1ꢂ & 3
6.0
5.0
4.0
3.0
2.0
BOTH LEADS TO HEAT
SINK WITH LENGTHS
AS SHOWN
ꢂ
I
I
I
= 5 I
avg
(pk)
(pk)
(pk)
3/8"
= 10 I
= 20 I
avg
avg
5/8"
R
= 40°C/W
ꢁ
JA
f = 60 Hz
SEE NOTE
1.0
0
6
ꢂ (I /I
= 6.28)
PK AVE
0
20
40
60
80 100 120 140 160 180 200
0
20
40
60
80 100 120 140 160 180 200
T , LEAD TEMPERATURE (°C)
L
T , AMBIENT TEMPERATURE (°C)
A
Figure 5. Maximum Current Ratings
Figure 6. Maximum Current Ratings
NOTES
THERMAL CIRCUIT MODEL
(For Heat Conduction Through The Leads)
32
28
24
20
16
12
8.0
4.0
0
CAPACITANCE LOADS
I
= 5 I
avg
(pk)
6
ꢂ
R
R
ꢁL(A)
R
ꢁJ(A)
R
ꢁJ(K)
R
ꢁL(K)
R
ꢁS(K)
ꢁ
S
(
A
)
10 I
20 I
avg
1
ꢂ
&
3
ꢂ
T
A(A)
T
A(K)
P
F
avg
T
L(A)
T
C(A)
T
J
T
C(K)
T
L(K)
Use of the above model permits junction to lead thermal resistance for
any mounting configuration to be found. Lowest values occur when one
side of the rectifier is brought as close as possible to the heat sink as
shown below. Terms in the model signify:
RESISTIVE − INDUCTIVE LOADS
T = Ambient Temperature
A
T = Lead Temperature
T = Case Temperature
C
T = Junction Temperature
J
L
0
4.0
8.0
12
16
20
24
28
32
R
R
R
= Thermal Resistance, Heat Sink to Ambient
= Thermal Resistance, Lead to Heat Sink
= Thermal Resistance, Junction to Case
ꢁ
ꢁ
ꢁ
S
L
J
I
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
Figure 7. Power Dissipation
P = Power Dissipation
F
(Subscripts A and K refer to anode and cathode sides, respectively.)
Values for thermal resistance components are:
R
R
= 40°C/W/in. Typically and 44°C/W/in Maximum.
= 2°C/W typically and 4°C/W Maximum.
ꢁ
L
ꢁ
J
Since R is so low, measurements of the case temperature, T , will be
40
ꢁ
J
C
SINGLE LEAD TO HEAT SINK,
INSIGNIFICANT HEAT FLOW
THROUGH OTHER LEAD
approximately equal to junction temperature in practical lead mounted
applications. When used as a 60 Hz rectifierm the slow thermal response
holds T
be found from: T = 175°−R P . P may be found from Figure 7.
35
30
25
close to T
. Therefore maximum lead temperature may
J(PK)
J(AVG)
ꢁ
L
JL
F
The recommended method of mounting to a P.C. board is shown on the
F
sketch, where R is approximately 25°C/W for a 1−1/2" x 1−1/2" copper
ꢁ
JA
surface area. Values of 40°C/W are typical for mounting to terminal strips
or P.C. boards where available surface area is small.
20
15
10
5.0
0
BOTH LEADS TO HEAT
SINK, EQUAL LENGTH
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1.0
L, LEAD LENGTH (INCHES)
Board Ground Plane
Recommended mounting for half wave circuit
Figure 8. Steady State Thermal Resistance
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4
MR750 SERIES
100
70
30
20
T = 25°C
J
T = 25°C
J
10
7.0
5.0
T = 175°C
J
50
30
I = 5 A
F
3 A
1 A
CURRENT INPUT WAVEFORM
I
F
3.0
2.0
0
I
R
t
rr
1.0
20
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
REPETITION FREQUENCY (kHz)
I /I , RATIO OF REVERSE TO FORWARD CURRENT
R F
Figure 9. Rectification Efficiency
Figure 10. Reverse Recovery Time
1.0
0.7
1000
700
ꢃ
f
T = 25°C
J
500
300
200
T = 25°C
J
ꢃ
fr
t
fr
0.5
ꢃ = 1.0 V
fr
100
70
0.3
0.2
50
30
20
ꢃ = 2.0 V
fr
0.1
10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0
3.0
5.0
7.0
10
V , REVERSE VOLTAGE (VOLTS)
R
I , FORWARD PULSE CURRENT (AMP)
F
Figure 11. Junction Capacitance
Figure 12. Forward Recovery Time
For a square wave input of amplitude V , the efficiency
factor becomes:
m
R
S
V
R
O
L
2
V m
2
R
2
L
.
σ
+
100% + 50%
(3)
(square)
V m
Figure 13. Single−Phase Half−Wave
Rectifier Circuit
R
L
(A full wave circuit has twice these efficiencies)
The rectification efficiency factor σ shown in Figure 9
As the frequency of the input signal is increased, the
reverse recovery time of the diode (Figure 10) becomes
significant, resulting in an increasing AC voltage
was calculated using the formula:
2 (dc)
V o
component across R which is opposite in polarity to the
(1)
100%
L
R
P
L
2 (dc)
forward current, thereby reducing the value of the efficiency
factor σ, as shown on Figure 9.
It should be emphasized that Figure 9 shows waveform
efficiency only; it does not provide a measure of diode
losses. Data was obtained by measuring the AC component
(dc)
V o
V o(ac) ) V o
.
.
σ +
+
100%+
2 (rms)
V o
2
2 (dc)
P
(rms)
R
L
For a sine wave input V sin (wt) to the diode, assumed
m
lossless, the maximum theoretical efficiency factor becomes:
of V with a true rms AC voltmeter and the DC component
with a DC voltmeter. The data was used in Equation 1 to
obtain points for Figure 9.
o
2
V
m
2
ꢄ R
L
4
π
.
.
σ
+
100% +
100% + 40.6%
(2)
2
V
(sine)
m
2
4R
L
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5
相关型号：
MR752-T3-LF
Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, P-600, 2 PIN
WTE
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