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SB3045LFCT

更新时间：2025-07-10 12:57:29
品牌：ASEMI
描述：DUAL LOW VF SCHOTTKY RECTIFIER

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SB3045LFCT 概述

DUAL LOW VF SCHOTTKY RECTIFIER 双路低VF肖特基整流器

SB3045LFCT 数据手册

通过下载SB3045LFCT数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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SB3045LFCT  
SB3 04 5LFCT  
DUAL LOW VF SCHOTTKY RECTIFIER  
30 Amperes  
4.93  
4.53  
10.36  
9.96  
VOLTAGE  
45 Volts  
CURRENT  
2.72  
2.32  
FEATURES  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• In compliance with EU RoHS 2002/95/EC directives  
2.96  
2.56  
1.24  
1.20  
1.46  
1.26  
MECHANICAL DATA  
0.9  
0.7  
Case : ITO-220AB, Plastic  
0.6  
0.45  
Terminals : Solderable per MIL-STD-750, Method 2026  
Weight: 0.055 ounces, 1.5615 grams.  
2.74  
2.34  
2.74  
2.34  
MAXIMUM RATINGS(TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
45  
UNIT  
V
Maximum repetitive peak reverse voltage  
VRRM  
per device  
Maximum average forward rectified current (Fig.3)  
per diode  
30  
15  
I
F(AV)  
FSM  
A
A
Peak forward surge current 8.3ms single half sine-wave  
per diode  
I
200  
4.5  
superimposed on rated load per diode  
Typical thermal resistance  
Operating junction  
R
Θ
JC  
oC/W  
oC  
TJ  
-55 to + 125  
-55 to + 125  
Storage temperature range  
T
STG  
oC  
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)  
PARAMETER  
Breakdown voltage  
SYMBOL  
V
TEST CONDITIONS  
=1mA  
MIN.  
50  
TYP.  
-
MAX.  
-
UNIT  
BR  
I
R
V
V
V
-
-
T
J
=25oC  
=25oC  
I
I
F
=5A  
0.42  
0.46  
0.46  
0.52  
Instantaneous forward voltage per  
diode (1)  
V
F
-
-
TJ  
F
=10A  
T
TJ  
J
=25oC  
-
-
uA  
mA  
500  
10  
100  
-
Reverse current per diode (2)  
I
R
VR=45V  
=100oC  
Note.1 Pulse test : 380μs pulse width, 1% duty cycle  
2. Pulse test : Pulse width < 2.5ms  
PAGE . 1  
www.asemi88.com  
SB3045LFCT  
SB3 04 5LFCT  
100  
10  
100  
Per Diode  
Per Diode  
TJ = 100°C  
10  
1
TJ = 100°C  
TJ = 25°C  
TJ = 75°C  
1
TJ = 125°C  
0.1  
0.01  
TJ = 25°C  
40  
0.1  
20  
60  
80  
100  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
VF, Forward Voltage (V)  
Percent of Rated Peak Reverse Voltage (%)  
Fig.1 Typical Forward Characteristics  
Fig.2 Typical Reverse Characteristics  
10000  
1000  
100  
12.00  
10.00  
8.00  
6.00  
4.00  
2.00  
0.00  
Per Diode  
Per Diode  
10  
0.1  
1
10  
100  
0
25  
50  
75  
100  
125  
150  
VR, Reverse Bias Voltage (V)  
Fig.3 Typical Junction Capacitance  
TC, Case Temperature (°C)  
Fig.4 Forward Current Derating Curve  
PAGE . 2  
www.asemi88.com  

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