2N2322 [ASI]

Silicon Controlled Rectifier, 1600mA I(T), 25V V(DRM);
2N2322
型号: 2N2322
厂家: ADVANCED SEMICONDUCTOR    ADVANCED SEMICONDUCTOR
描述:

Silicon Controlled Rectifier, 1600mA I(T), 25V V(DRM)

栅 栅极
文件: 总4页 (文件大小:276K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2N2322-PBF

Silicon Controlled Rectifier
NJSEMI

2N2322A-PBF

Silicon Controlled Rectifier
NJSEMI

2N2322HR

Silicon Controlled Rectifier
NJSEMI

2N2322LEADFREE

Silicon Controlled Rectifier, 1.6A I(T)RMS, 25V V(DRM), 25V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3
CENTRAL

2N2323

SCRs 1.6 Amp, Planear
MICROSEMI

2N2323

Bipolar NPNP Device in a Hermetically sealed TO5
SEME-LAB

2N2323

SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS
CENTRAL

2N2323

SILICON THYRISTORS
COMSET

2N2323

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 50V V(DRM), 1 Element, TO-39, TO-39, 3 PIN
ASI

2N2323

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39
DIGITRON

2N2323A

SILICON CONTROLLED RECTIFIER
MICROSEMI

2N2323A

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.1; Package: TO-39
DIGITRON