2N6166 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | 2N6166 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6166
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .500 4L FLG
The ASI 2N6166 is Designed to
operate in a collector modulated VHF
Power Amplifier Applications up to 200
MHz.
.112x45°
L
A
E
Ø.125 NOM.
C
FULL R
C
FEATURES:
B
E
B
• ηC = 60 % min. @ 100 W/150 MHz
• PG = 6.0 dB min. @ 100 W/150 MHz
• Omnigold™ Metalization System
E
D
F
G
H
K
J
I
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
MAXIMUM RATINGS
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
.125 / 3.18
.125 / 3.18
9.0 A
65 V
IC
.245 / 6.22
.255 / 6.48
.720 / 18.28
.7.30 / 18.54
VCBO
VEBO
PDISS
TJ
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
4.0 V
117 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.5 °C/W
J
K
L
.980 / 24.89
TSTG
θJC
ORDER CODE: ASI10790
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 200 mA
IC = 200 mA
IE = 10 Ma
VCE = 30 V
VCB = 30 V
VCE = 5.0 V
65
V
35
BVCEO
BVEBO
ICES
V
4.0
V
5.0
30
mA
mA
---
ICBO
IC = 500 mA
5.0
hFE
V
CE = 28 V
f = 1.0 MHz
f = 150 MHz
130
COB
pF
6.0
60
PG
dB
%
VCC = 28 V
POUT = 100 W
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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