ALR100_10 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ALR100_10 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ALR100
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2L FLG
L
N
J
DESCRIPTION:
O
A
B
D
C
1
The ASI ALR100 is Designed for
1200 – 1400 MHz, L-Band Applications.
E
2
3
K
4
.062 x 45°
M
Ø.120
G
P
FEATURES:
F
I
H
Q
• Internal Input/Output Matching Network
• PG = 6.0 dB at 100 W/1400 MHz
• Omnigold™ Metalization System
R
MINIMUM
inches mm
MAXIMUM
inches mm
DIM
/
/
.140 / 3.56
.110 / 2.80
.110 / 2.80
A
B
C
D
E
F
G
H
I
.395 / 10.03
.407 / 10.34
.193 / 4.90
.230 / 5.84
.006 / 0.15
.131 / 3.33
MAXIMUM RATINGS
.003 / 0.08
.118 / 3.00
13.5 A
32 V
IC
VCC
PDISS
TJ
.063 / 1.60
.650 / 16.51
.386 / 9.80
.900 / 22.86
.450 / 11.43
.125 / 3.18
J
K
L
M
N
O
P
Q
R
270 W @ TC = 25 °C
-65 °C to +250 °C
-65 °C to +200 °C
0.55 °OC/W
.050 / 1.27
.405 / 10.29
.170 / 4.32
.062 / 1.58
TSTG
θJC
1 = COLLECTOR
2&3 = BASE
4 = EMITTER
ORDER CODE: ASI10514
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 100 mA
IE = 10 mA
65
V
65
BVCES
BVEBO
ICES
V
3.5
V
V
CE = 32 V
CE = 5.0 V
20
---
mA
---
V
IC = 5.0 A
15
hFE
6.0
50
PG
dB
%
VCC = 28 V
POUT = 100 W
f = 1.2 to 1.4 GHz
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. C
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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