AM0912-150 [ASI]
FR POWER TRANSISTOR; FR功率晶体管
| 型号： | AM0912-150 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | FR POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM0912-150
RF POWER TRANSISTOR
PACKAGE - .400 X .500 2L FLG
DESCRIPTION:
The ASI AM0912-150 is a Common
Base Transistor Designed for TCAS
and JTIDS Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
• Gold Metallization
• Hermetic Package
• Input/Output Matching
MAXIMUM RATINGS
16.5 A
35 V
IC
VCC
PDISS
300 W @ TC = ≤ 100 °C
-65 °C to +250 °C
-65 °C to +200 °C
0.57 °C/W
TJ
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 60 mA
IC = 100 mA
IE = 10 mA
VCB = 35 V
55
V
BVCES
BVEBO
ICES
55
V
3.5
V
25
mA
---
hFE
VCE = 5.0 V
IC = 5.0 A
20
300
7.0
38
330
7.4
45
POUT
PG
ηC
W
dB
%
VCC = 35 V
f = 960 to 1215 MHz
PIN = 26.7 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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