ASI2N5643 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASI2N5643 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5643
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .380 4L STUD
The ASI 2N5643 is Designed for
wideband large-signal amplifier stages
in the 125 – 175 MHz range.
A
.112x45°
C
B
E
E
FEATURES:
ØC
B
• Minimum Gain = 7.6 dB
• Output Power = 40 W
• Omnigold™ Metalization System
I
D
H
J
G
#8-32 UNC-2A
F
MAXIMUM RATINGS
E
IC
5.0 A
65 V
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
VCBO
VCEO
VEBO
PDISS
TJ
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
A
B
C
D
E
F
G
H
I
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
35 V
4.0 V
60 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
2.9 °C/W
J
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 200 mA
IC = 200 mA
IE = 10 mA
35
V
BVCES
BVEBO
ICBO
65
V
4.0
V
V
CB = 30 V
CE = 5.0 V
1.0
---
mA
---
hFE
V
IC = 500 mA
5.0
7.6
COB
VCB = 30 V
f = 1.0 MHz
45
65
---
pF
GP
VCE = 28 V
VCE = 10 V
POUT = 40 W
IC = 200 mA
f = 175 MHz
f = 100 MHz
8.1
60
dB
%
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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