ASISD1905 [ASI]
HF/VHF POWER MOSFET N-Channel Enhancement Mode; 高频/甚高频功率MOSFET N沟道增强模式
| 型号： | ASISD1905 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | HF/VHF POWER MOSFET N-Channel Enhancement Mode |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD1905
HF/VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI SD1905 is Designed for
General Purpose Class-A,B Power
Amplifier Applications up to 200 MHz.
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
Ø.125 NOM.
FEATURES:
S
FULL R
D
• PG = 13 dB Typical at 200 MHz
• Common Source Configuration
• Omnigold™ Metalization System
J
.125
S
G
C
E
D
F
I
H
MAXIMUM RATINGS
G
ID
V(BR)DSS
VDGR
VGS
8.4 A
65 V
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
A
B
C
D
E
F
G
H
I
65 V
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
± 20 V
.004 / 0.10
.085 / 2.16
.160 / 4.06
PDISS
TJ
117 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.5 °C/W
.240 / 6.10
J
TSTG
θJC
NONE
CHARACTERISTICS TC = 25°C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BVDSS
ID = 10 mA
65
V
IDSS
IGSS
gfs
V
DS = 28 V
DS = 0 V
VGS = 0 V
5.0
1.0
mA
V
VGS = 20 V
VDS = 10 V
µA
ID = 10 A
.7
mohs
80
70
20
Ciss
Coss
Crss
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
pF
PG
ηD
VDD = 28 V
IDQ = 25 mA
Pout = 45 W
f = 150 MHz
12
50
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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