ASTD1020-00 [ASI]
Tunnel Diode;
| 型号： | ASTD1020-00 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | Tunnel Diode 二极管 |
| 文件： | 总1页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASTD1020-00
PLANAR TUNNEL (BACK) DIODE
DESCRIPTION:
PACKAGE STYLE DIE FORM
The ASTD1020-00 is a Tunnel
Diodes Optimized for Operation as
Back Diode Detector in Applications
up to 18 GHz.
FEATURES INCLUDE:
• Excellent Temperature Stability
• Fast Rise / Fall Times
• In Die Form
MAXIMUM RATINGS
10 mA
IR
3 ERG spike
PDISS
PDISS
TJ
50 mW @ TA = +60 OC
-65 to +110 OC
-65 to +125 OC
TSTG
ELECTRICAL CHARACTERISTICS TC = 25 OC
SYMBOL
IP
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
100
200
μA
mV
VF
VR
λ
IF = 3 mA
135
400
mV
IR = 500 μA
F = 10 GHz
F = 10 GHz
IR = 10 mA
1,000
180
mV/mW
Ω
RL = 10 KΩ
RL = 10 KΩ
F = 100 MHz
RV
RS
7.0
Ω
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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