AUR500 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | AUR500 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUR500
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The AUR 500 is Designed for
UHF Radar and Pulsed signal apps
FEATURES:
PACKAGE STYLE .400 BAL FLG (A)
A
B
FULL R
4X.060 R
C
E
· Input Matching Network
P
D
·
· Omnigold™ Metalization System
F
G
H
I
J
K
N
MAXIMUM RATINGS
M
L
MINIMUM
inches mm
MAXIMUM
inches mm
43.2 A
65 V
IC
DIM
/
/
.210 / 5.33
.045 / 1.14
.125 / 3.18
.380 / 9.65
.770 / 19.56
.070 / 1.78
.215 / 5.46
.420 / 10.67
.645 / 16.38
.895 / 22.73
.002 / 0.05
.058 / 1.47
.115 / 2.92
.230 / 5.84
.055 / 1.40
.135 / 3.43
.390 / 9.91
.830 / 21.08
.080 / 2.03
.235 / 5.97
.430 / 10.92
.655 / 16.64
.905 / 22.99
.006 / 0.15
.065 / 1.65
.130 / 3.30
.230 / 5.84
.405 / 10.29
A
B
C
D
E
F
G
H
I
VCBO
VCES
VEBO
PDISS
TJ
65 V
3.5 V
1167 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.15 OC/W
J
K
L
M
N
P
TSTG
qJC
.395 / 10.03
ORDER CODE: ASI10550
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 50 mA
IE = 10 mA
VE = 30 V
65
V
BVCES
BVEBO
ICES
65
V
3.5
V
15
mA
---
hFE
VCE = 5.0 V
IC = 5.0 A
00
200
PG
9.5
50
dB
%
VCC = 40 V
POUT = 500 W
f = 425 MHz
hC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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