BLX65S [ASI]
NPN SILICON HIGH FREQUENCY TRANSISTOR; NPN硅高频三极管
| 型号： | BLX65S |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 文件： | 总1页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASI BLX65S
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION
The ASI BLX65S is Designed for
12.5 V Class C Amplifier Applications
in the 100 to 500 MHz Frequency
Range.
PACKAGE STYLE TO-39
FEATURES INCLUDE:
• Economical TO-39 Package
• 8 dB Typical Gain
• Emitter Ballasting
MAXIMUM RATINGS
750 mA
IC
36 V
VCBO
PDISS
TJ
5.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
35 OC / W
TSTG
θJC
1 = EMITTER 2 = BASE
3 = COLLECTOR (CASE)
CHARACTERISTICS TA = 25 O
C
NONE
SYMBOL
BVCEO
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
V
IC = 50 mA
IC = 50 mA
IE = 1.0 mA
VCB = 15 V
VCB = 5.0 V
16
BVCES
BVEBO
ICBO
36
V
V
2.5
1.0
mA
---
hFE
IC = 50 mA
20
200
COB
VCB = 12.5 V
VCE = 12.5 V
f = 1.0 MHz
f = 470 MHz
15
55
pF
GPE
7.0
dB
%
POUT = 2.0 W
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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