BM30-12 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | BM30-12 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BM30-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BM30-12 is Designed for
VHF land mobil applications in the 150-
175 MHZ range.
PACKAGE STYLE .500 6L FLG
A
C
FEATURES:
C
2x ØN
FULL R
E
• Common Emitter
D
G
• POUT = 30 W at175 MHz
• Omnigold™ Metalization System
• Internal Matching network
E
B
B
E
.725/18,42
F
M
K
H
I
L
MAXIMUM RATINGS
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
IC
8.0 A
36 V
.150 / 3.43
.160 / 4.06
A
B
C
D
E
F
G
H
I
.045 / 1.14
VCES
VCEO
VEBO
PDISS
TJ
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
18 V
4.0 V
.125 / 3.18
.725 / 18.42
65 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
2.7 °C/W
.970 / 24.64
.090 / 2.29
.150 / 3.81
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
J
K
L
M
N
TSTG
θJC
.120 / 3.05
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 20 mA
IC = 50 mA
IE = 5.0 mA
36
V
18
BVCEO
BVEBO
4.0
V
pF
W
V
CB = 12.5 V
CC = 12.5 V
f = 1.0 MHz
f = 175 MHz
110
Cob
30
POUT
PIN
V
POUT = 40 W
4.5
60
W
%
ηC
1.0 + j1.4
ZIN
ZL
Ω
Ω
POUT = 30 W
f = 175 MHz
1.75 + j0.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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