CBSL60B [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | CBSL60B |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBSL60B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .450 BAL FLG (A)
The ASI CBSL60B is Designed for
.060x45°
B
FULL R
A
.100x45°
C
E
FEATURES:
D
P
F
· Input Matching Network
·
· Omnigold™ Metalization System
G
H
J
K
N
M
L
MAXIMUM RATINGS
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.055 / 1.40
.230 / 5.84
A
B
C
D
E
F
8.0 A
60 V
IC
.120 / 3.05
.130 / 3.30
.785 / 19.94
.465 / 11.81
.130 / 3.30
VCBO
VCEO
VEBO
PDISS
TJ
.455 / 11.56
.120 / 3.05
28 V
.838 / 21.28
.850 / 21.59
1.105 / 28.07
.535 / 13.59
.005 / 0.15
.065 / 1.65
.095 / 2.41
.195 / 4.95
.455 / 11.56
G
H
J
1.095 / 27.81
.525 / 13.34
.002 / 0.05
.055 / 1.40
.080 . 2.03
3.5 V
K
L
146 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.2 OC/W
M
N
P
.445 / 11.30
TSTG
qJC
ORDER CODE: ASI10584
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 100 mA
IE = 20 mA
VCE = 25 V
VCE = 5.0 V
60
V
BVCEO
BVEBO
ICEO
28
V
3.5
V
30
80
mA
---
hFE
IC =3.0 A
25
VCC = 26 V
POUT = 60 W
ICQ = 2 X 200 mA
f = 960 MHz
f = 960 MHz
PG
8.5
5:1
dB
---
VSRW
VCC = 26 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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