CBSL6_07 [ASI]

NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
CBSL6_07
型号: CBSL6_07
厂家: ADVANCED SEMICONDUCTOR    ADVANCED SEMICONDUCTOR
描述:

NPN SILICON RF POWER TRANSISTOR
NPN硅射频功率晶体管

晶体 晶体管 射频
文件: 总2页 (文件大小:25K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CBSL6  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI CBSL6 is a gold metalized  
epitaxial silicon NPN transistor,  
designed for high linearity Class-AB  
cellular base station applications. It  
also operates in Class-C.  
PACKAGE STYLE .230 6L FLG  
A
B
C
.040x45°  
2XØ.130  
4X .025 R  
.115  
D
.430  
FEATURES:  
E
Internal Input Matching Network  
850-960MHz  
.125  
I
F
G
H
PG = 10 dB at 6.0 W/960 MHz  
Omnigold™ Metalization System  
L
K
J
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.355 / 9.02  
.115 / 2.92  
.075 / 1.91  
.225 / 5.72  
.090 / 2.29  
.720 / 18.29  
.970 / 24.64  
.355 / 9.02  
.004 / 0.10  
.120 / 3.05  
.160 / 4.06  
.230 / 5.84  
.365 / 9.27  
.125 / 3.18  
.085 / 2.16  
.235 / 5.97  
.110 / 2.79  
.730 / 18.54  
.980 / 24.89  
.365 / 9.27  
.006 / 0.15  
.130 / 3.30  
.180 / 4.57  
.260 / 6.60  
MAXIMUM RATINGS  
A
B
C
D
E
F
G
H
I
2.4 A  
50 V  
IC  
VCBO  
VCES  
VEBO  
PDISS  
TJ  
35 V  
J
3.5 V  
K
L
53 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
3.3 °C/W  
ORDER CODE: ASI10580  
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 5.0 mA  
IC = 5.0 mA  
IE = 5.0 mA  
24  
V
50  
BVCBO  
BVEBO  
ICEO  
V
3.5  
V
V
CE = 24 V  
1.0  
1.0  
100  
mA  
mA  
---  
VCB = 24 V  
VCE = 10 V  
ICBO  
IC = 0.1 A  
20  
hFE  
VCB = 24 V  
f = 1.0 MHz  
7.5  
8.5  
COB  
pF  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. C  
1/2  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
CBSL6  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
VCC = 24 V  
POUT = 6.0 W  
ICQ = 25 mA  
PIN = 0.6 W  
f = 850-960 MHz  
10  
12  
50  
PG  
dB  
%
---  
ηC  
IMPEDANCE DATA  
FREQ  
ZIN()  
ZCL()  
850 MHz  
900 MHz  
950 MHz  
2.6 + j5.4  
303 + j6.1  
4.6 + j5.9  
9.5 + j1305  
909 + j15.0  
806 + j13.0  
A
B
C
.04 0 x4 5 °  
2 X Ø .1 3 0  
4 X .0 2 5 R  
3
1
3
3
.11 5  
D
.43 0  
E
3
2
.12 5  
I
F
G
H
L
K
J
M IN IM U M  
in ch e s / m m  
M A X IM U M  
in ch e s / m m  
D IM  
.35 5 / 9 .0 2  
.11 5 / 2 .9 2  
.07 5 / 1 .9 1  
.22 5 / 5 .7 2  
.09 0 / 2 .2 9  
.72 0 / 1 8 .2 9  
.97 0 / 2 4 .6 4  
.35 5 / 9 .0 2  
.00 4 / 0 .1 0  
.12 0 / 3 .0 5  
.16 0 / 4 .0 6  
.23 0 / 5 .8 4  
.36 5 / 9 .2 7  
.12 5 / 3 .1 8  
.08 5 / 2 .1 6  
.23 5 / 5 .9 7  
.11 0 / 2 .7 9  
A
B
C
D
E
F
G
H
I
.73 0 / 1 8 .5 4  
.98 0 / 2 4 .8 9  
.36 5 / 9 .2 7  
.00 6 / 0 .1 5  
.13 0 / 3 .3 0  
.18 0 / 4 .5 7  
.26 0 / 6 .6 0  
J
K
L
1 = Collector  
2 = Base  
3 = Emitter  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. C  
2/2  

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