HF100-12_1 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | HF100-12_1 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HF100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .500 4L FLG
The ASI HF100-12 is a 12.5 V Class-
C epitaxial planar transistor designed
primarily for HF communications. This
device utilizes state of the art diffused
Emitter Ballasting to achieve extreme
ruggedness under severe operating
conditions.
.112x45°
L
A
Ø.125 NOM.
E
C
FULL R
C
B
E
B
E
D
F
G
H
FEATURES:
K
J
I
• PG = 13 Typ. min. at 100 W/30 MHz
• IMD3 = -30 dBc max. at 100 W(PEP)
• Omnigold™ Metalization System
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
.125 / 3.18
.125 / 3.18
.245 / 6.22
.255 / 6.48
.720 / 18.28
.7.30 / 18.54
MAXIMUM RATINGS
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
IC
20 A
36 V
VCBO
VCEO
VEBO
PDISS
TJ
J
K
L
18 V
.980 / 24.89
4.0 V
ORDER CODE: ASI10599
290 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.6 °C/W
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 100 mA
IC = 100 mA
IE = 10 mA
36
36
18
4.0
V
BVCES
BVCEO
BVEBO
ICES
V
V
V
V
CE = 15 V
CE = 5.0 V
20
mA
---
hFE
V
IC = 5.0 A
10
200
COB
VCB = 12.5 V
f = 1.0 MHz
400
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/2
Specifications are subject to change without notice.
HF100-12
VCE = 12.5 V
VCE = 12.5 V
ICQ = 150 mA
ICQ = 150 mA
f = 30 MHz
POUT = 100 W
11
13
GP
dB
-30
IMD3
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
2/2
Specifications are subject to change without notice.
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