HF150-50S [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | HF150-50S |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HF150-50S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .500 4L STUD (A)
The ASI HF150-50S is Designed for
A
.112 x 45°
FEATURES:
Ø .630 NOM
C
· PG = 14 dB min. at 150 W/30 MHz
· IMD3 = 100 dBc max. at 150 W(PEP)
· Omnigold™ Metalization System
E
E
B
C
D
B
E
G
F
1/4-28 UNF-2A
MAXIMUM RATINGS
H
IC
10 A
110 V
VCBO
VEBO
VCEO
PDISS
TJ
MINIMUM
MAXIMUM
inches / mm
DIM
4.0 V
inches
/
mm
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
55 V
1.050 / 26.67
.555 / 14.10
.505 / 12.83
.007 / 0.18
.830 / 21.08
.198 / 5.03
.530 / 13.46
.545 / 13.84
.495 / 12.57
.003 / 0.08
233 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.75 OC/W
.185 / 4.70
.497 / 12.62
G
H
TSTG
qJC
ORDER CODE: ASI10613
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
BVCES
BVCEO
BVEBO
ICEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 100 mA
IC = 100 mA
IE = 10 mA
VCE = 30 V
VE = 60 V
110
110
55
V
V
V
4.0
V
5
5
mA
mA
---
ICES
hFE
VCE = 6 V
IC = 1.4 A
18
43.5
Cob
VCB = 50 V
f = 1.0 MHz
220
pF
GP
14
37
dB
VCE = 50 V
ICQ =100 mA
POUT = 150 W(PEP)
IMD3
h C
-30
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
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