HF20-12S_1 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | HF20-12S_1 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HF20-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF20-12S is Designed for
12.5 V Class AB & C HF Power
Amplifier Applications in the 2 to 32
MHz Band.
PACKAGE STYLE .380 4L STUD
A
.112x45°
C
B
FEATURES:
E
E
• PG = 15 dB min. at 20 W/30 MHz
• IMD3 = -30 dBc max. at 20 W(PEP)
• Omnigold™ Metalization System
• Emitter Ballasting
ØC
B
I
D
H
J
G
#8-32 UNC-2A
F
E
MAXIMUM RATINGS
IC
4.5 A
36 V
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
A
B
C
D
E
F
G
H
I
VCBO
VCEO
VEBO
PDISS
TJ
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
18 V
4.0 V
80 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.2 °C/W
J
TSTG
θJC
ORDER CODE: ASI10595
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 50 mA
IC = 50 mA
IE = 5.0 mA
36
36
18
4.0
V
BVCES
BVCEO
BVEBO
ICES
V
V
V
V
CE = 15 V
CE = 5.0 V
5
mA
---
hFE
V
IC = 1.0 A
10
15
200
Cob
V
CB = 12.5 V
f = 1.0 MHz
f = 30 MHz
100
pF
GP
dB
VCC = 12.5 V
ICQ =25 mA
IMD3
-30
dBc
POUT = 20 W (PEP)
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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