HF220-50_07 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | HF220-50_07 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HF220-50
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF220-50 is a 50 V epitaxial
silicon NPN transistor, designed for
SSB communications.
PACKAGE STYLE .500 4L FLG
.112x45°
L
FEATURES:
A
Ø.125 NOM.
FULL R
C
C
• PG = 13 dB Typical at 220 W/30 MHz
• IMD3 = -30 dBc Max. at 220 W(PEP)
• Omnigold™ Metalization System
• 50 V operation
E
B
E
B
E
D
F
G
H
K
J
I
MAXIMUM RATINGS
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
IC
12 A
110 V
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
.125 / 3.18
.125 / 3.18
VCBO
VCEO
VEBO
PDISS
TJ
.245 / 6.22
.255 / 6.48
.720 / 18.28
.7.30 / 18.54
55 V
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
4.0 V
320 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.7 OC/W
J
K
L
.980 / 24.89
TSTG
θJC
ORDER CODE: ASI10614
CHARACTERISTICS TC = 25 O
C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 200 mA
110
V
BVCEO
BVEBO
ICEO
IC = 200 mA
IE = 20 mA
55
V
4.0
V
VCE = 30 V
VCE = 55 V
VCE = 6 V
5
mA
mA
---
ICES
10
80
hFE
IC = 10 A
15
Cob
GP
V
CB = 50 V
f = 1.0 MHz
390
-30
pF
13
40
dB
VCE = 50 V
ICQ =150 mA
POUT = 220 W(PEP)
f2 = 30.001 MHz
IMD3
ηC
dBc
%
f1 = 30.000 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/2
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
HF220-50
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
2/2
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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