HSCH6312 [ASI]
Mixer Diode, 400ohm Z(V) Max, 6.2dB Noise Figure, Silicon,;
| 型号： | HSCH6312 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | Mixer Diode, 400ohm Z(V) Max, 6.2dB Noise Figure, Silicon, 二极管 |
| 文件： | 总1页 (文件大小：16K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HSCH6312
SCHOTTKY MIXER/DETECTOR DIODE
DESCRIPTION:
The HSCH6312 is a Hermatically
Sealed , Silicon Medium Barrier
Schottky Mixer/Detector Diode
Designed for X-Band Operation.
PACKAGE STYLE 860
MAXIMUM RATINGS
I
20 mA
V
4.0 V
PDISS
TJ
150 mW @ TC = 25 OC
-65 OC to +175 OC
-65 OC to +200 OC
TSTG
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
NF
6.2
400
1.5
dB
Z
IF
200
4.0
Ohms
VSWR
VB
IR = 10 mA
IF = 1.0 mA
IF = 5.0 mA
V = 0 V
V
mV
Ohms
pF
VF
500
16
RD
CT
f = 1.0 MHz
0.27
290
Tsold
t = 10 SEC.
OC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
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