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元器件品牌
HVV1011-500L
[ASI]
50V Supply Voltage;
元器件型号：
HVV1011-500L
生产厂家：
ADVANCED SEMICONDUCTOR
描述和应用：
50V Supply Voltage
PDF文件：
总3页 (文件大小：524K)
下载文档：
下载PDF数据表文档文件
型号参数：HVV1011-500L参数
查看货源
HVV1011-600
Silicon MOSFET Technology
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156
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1
ASI
HVV1011-600-EK
Silicon MOSFET Technology
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156
-
1
ASI
HVV1012-060
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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37
HVVI
HVV1012-100
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications
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: Undefined variable $rtag in
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156
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42
HVVI
HVV1012-250
L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
Warning
: Undefined variable $rtag in
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156
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41
HVVI
HVV1012-250-EK
L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
Warning
: Undefined variable $rtag in
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156
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16
HVVI
HVV1012-550
Excellent Thermal Stability
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156
-
1
ASI
HVV1012-550-EK
Excellent Thermal Stability
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156
-
1
ASI
HVV1214-025
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
Warning
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42
HVVI
HVV1214-025S
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
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18
HVVI
HVV1214-075
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
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31
HVVI
HVV1214-100
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
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26
HVVI
HVV1214-100-EK
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
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156
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27
HVVI
HVV1214-140
All Gold Bonding Scheme
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156
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1
ASI
HVV1214-140-EK
All Gold Bonding Scheme
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156
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1
ASI
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