HXTR5104 [ASI]
LINEAR POWER TRANSISTOR; 线性功率晶体管
| 型号： | HXTR5104 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | LINEAR POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HXTR5104
LINEAR POWER TRANSISTOR
DESCRIPTION:
The ASI HXTR5104 is a Common
Base Device Designed for high
PACKAGE STYLE 100 4L
poutput power and gain at VHF, UHF,
and microwave frequency applications.
FEATURES INCLUDE:
• High Gain
• Hermetic package
• High power output
MAXIMUM RATINGS
250 mA
45 V
IC
VCBO
VCEO
PDISS
TJ
27 V
4.0 W @ TC = 25 °C
-65 °C to+200 °C
-65 °C to+200 °C
44 °C/W
TSTG
θJC
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 10 mA
IC = 50 mA
IE = 100 µA
VEB = 2.0 V
VCE = 32 V
VCB = 20 V
VCE = 18 V
40
V
BVCEO
BVEBO
IEBO
24
V
3.3
V
10
200
100
85
µA
nA
nA
---
ICES
ICBO
HFE
IC = 110 mA
IC = 110 mA
15
CCB
VCB = 10
f = 1.0 MHz
f = 2.0 GHz
0.70
pF
P1dB
G1dB
η
28
29
9.0
35
dBm
dBm
%
VCE = 18 V
8.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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