MRA1417-2 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRA1417-2 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRA1417-2
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRA1417-2 is a Common
Base Device Designed for Class C
Power Amplifier Applications up to 1.7
GHz.
FEATURES INCLUDE:
PACKAGE STYLE 250 2L FLG (C)
• Gold Metallization
• Emitter Ballasting
• Input Matching
MAXIMUM RATINGS
0.5 A
50 V
IC
VCBO
PDISS
TJ
12 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
15 °C/W
TSTG
θJC
1 = COLLECTOR 2 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 20 mA
IE = 0.25 mA
VCB = 28 V
50
V
3.5
BVEBO
ICBO
V
0.5
mA
---
V
CE = 5.0 V IC = 100 mA
10
100
hFE
VCB = 28 V
f = 1.0 MHz
4.5
Cob
pF
8.0
45
PG
dB
%
VCE = 28 V POUT = 2.0 W
f = 1700 MHz
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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