MRAL1720-5 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRAL1720-5 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRAL1720-5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE 400 4L FLG
The ASI MRAL1720-5 is Designed
for Class C, Common Base Wideband
Large Signal Amplifier Applications up
to 2.0 GHz.
FEATURES:
• Diffused Ballast Resistors.
• Internal Matching Network
• Omnigold™ Metalization System
MAXIMUM RATINGS
1.0 A (CONT)
42 V
IC
VCES
VEBO
TJ
3.5 V
-65 °C to +200 °C
-65 °C to +150 °C
8.0 °C/W
TSTG
θJC
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 40 mA
IE = 0.5 mA
42
V
3.5
BVEBO
ICBO
V
V
CB = 22 V
CE = 5.0 V
1.0
mA
---
V
IC = 200 mA
Pout = 5.0 W
10
100
hFE
VCB = 28 V
VCE = 22 V
f = 1.0 MHz
8.0
Cob
pF
6.5
40
GPB
dB
%
f = 1.7 GHz & 2.0 GHz
η
c
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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