MRF151G [ASI]
RF FIELD-EFFECT POWER TRANSISTOR; 射频场效应功率晶体管
| 型号： | MRF151G |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | RF FIELD-EFFECT POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF151G
RF FIELD-EFFECT POWER TRANSISTOR
DESCRIPTION:
The ASI MRF151G is a Dual
Common Source N-Channel
Enhancement-Mode MOSFET
RF Power Transistor, Designed for
175 MHz, 300 W Transmitter and
Amplifier Applications.
PACKAGE STYLE .385X.850 4LFG
MAXIMUM RATINGS
40 A
125 V
ID
VDSS
VGS
PDISS
TJ
±40 V
500 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.35 OC/W
1 & 2 = DRAIN
3 & 4 = GATE
TSTG
θJC
5 = SOURCE
CHARACTERISTICS TC = 25 O
C
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
V
BVDSS
ID = 100 mA
125
IDSS
IGSS
VDS = 50 V
VDS = 0 V
ID = 100 mA
ID = 10 A
VGS = 0 V
5.0
1.0
5.0
5
mA
µA
VGS = 20 V
VDS = 10 V
VGS = 10 V
VDS = 10 V
VGS(th)
VDS(on)
gfs
1.0
5.0
V
V
ID = 5.0 A
mhos
Ciss
350
VDS = 50 V
VGS = 0 V
f = 1.0 MHz
pF
250
15
Coss
Crss
Gps
V
DD = 50 V
IDQ = 500 mA Pout = 300 W
14
50
16
55
dB
%
f = 175 MHz
η
ψ
VSWR = 5:1 AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
相关型号：
MRF1535NT1_08
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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