MRF454 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRF454 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF454
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF454 is Designed for
12.5 Volt Power Amplifier Applications
up to 30 MHz.
FEATURES INCLUDE:
• Replacement for SD1405
• PG = 12 dB Min. @ 30MHz & 80W
• Withstands 20:1 Load VSWR
PACKAGE STYLE .500" 4L FLANGE
MAXIMUM RATINGS
20 A
45 V
IC
VCB
VCE
VEB
PDISS
TJ
25 V
4.0 V
250 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.7 °C/W
TSTG
θJC
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCES
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 100 mA
IE = 10 mA
36
V
18
BVCEO
BVEBO
ICES
V
4.0
V
VCE = 15 V
VCE = 5.0 V
VCB = 15 V
15
mA
---
pF
IC = 5.0 A
10
150
hFE
f = 1.0 MHz
250
COB
12
50
GPE
dB
%
VCC = 15 V
POUT = 80 W(PEP)
f = 30.000 & 30.001 MHz
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
相关型号：
MRF466
Power Bipolar Transistor, 6A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 4 Pin
MOTOROLA
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