MRF604 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管型号: | MRF604 |
厂家: | ADVANCED SEMICONDUCTOR |
描述: | NPN SILICON RF POWER TRANSISTOR |
文件: | 总1页 (文件大小:16K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MRF604
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE TO-46
The ASI MRF604 is Designed for
General Purpose Oscillator
Applications up to 175 MHz.
FEATURES:
• VCC = 12.5 V
• POUT = 1.0 W
• Omnigold™ Metalization System
MAXIMUM RATINGS
150 mA
40 V
IC
VCB
PDISS
TJ
2.0 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
88 °C/W
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 5.0 mA
IC = 100 µA
IE = 100 µA
20
V
40
BVCBO
BVEBO
ICEO
V
3.5
V
V
CE = 12 V
CE = 5.0 V
1.0
mA
---
V
IC = 50 mA
20
200
hFE
VCB = 12.5 V
f = 1.0 MHz
3.5
COB
pF
VCC = 12.5 V
VCC = 12.5 V
VCE = 10 V
POUT = 1.0 W
POUT = 1.0 W
IE = 50 mA
f = 175 MHz
f = 175 MHz
f = 200 MHz
50
10
%
dB
ηC
PG
ft
800
MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
相关型号:
MRF627
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
MOTOROLA
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