MRF648 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRF648 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF648
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF648 is Designed for
12.5 V UHF large signal amplifier
applications up to 512 MHz.
PACKAGE STYLE .500 6L FLG
A
C
FEATURES:
2x ØN
FULL R
• Internal Input Matching Network
• PG = 4.4 dB at 60 W/470 MHz
• Omnigold™ Metalization System
D
B
E
.725/18,42
F
G
M
K
MAXIMUM RATINGS
H
I
L
J
11 A
36 V
IC
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.150 / 3.43
.160 / 4.06
A
B
C
D
E
F
G
H
I
VCBO
VCEO
VEBO
PDISS
TJ
.045 / 1.14
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
16 V
4.0 V
.125 / 3.18
175 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.0 °C/W
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
J
K
L
M
N
TSTG
θJC
.120 / 3.05
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 50 mA
IE = 5.0 Ma
VCE = 15 V
36
V
16
BVCEO
BVEBO
ICES
4.0
V
mA
---
15
V
CE = 5.0 V
IC = 6.0 A
20
150
hFE
VCB = 12.5 V
f = 1.0 MHz
130
150
COB
pF
4.4
55
5.0
65
PG
dB
%
VCE = 12.5 V
POUT = 60 W
f = 470 MHz
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
相关型号：
MRF6522-60
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 360B-04, 3 PIN
MOTOROLA
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