MT5C1008CW-55/883C [ASI]
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS; 与双芯片128K ×8 SRAM启用可作为军用规格
| 型号： | MT5C1008CW-55/883C |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
| 文件： | 总17页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRAM
MT5C1008
Austin Semiconductor, Inc.
128K x 8 SRAM
PIN ASSIGNMENT
(Top View)
WITH DUAL CHIP ENABLE
32-Pin DIP (C, CW)
32-Pin CSOJ (SOJ)
32-Pin LCC (EC)
32-Pin SOJ (DCJ)
AVAILABLE AS MILITARY
SPECIFICATIONS
•SMD 5962-89598
•MIL-STD-883
VCC
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2 10
A1 11
A0 12
DQ1 13
DQ2 14
DQ3 15
1
2
3
4
5
6
7
8
9
32
VCC
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
31 A15
30 CE2
29 WE\
28 A13
27 A8
A15
CE2
WE\
A13
A8
A9
FEATURES
26 A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
25 A11
24 OE\
23 A10
22 CE\
21 DQ8
20 DQ7
19 DQ6
18 DQ5
17 DQ4
• High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power CMOS process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1\, CE2, and OE\
options.
VSS
16
32-Pin LCC (ECA)
32-Pin Flat Pack (F)
• All inputs and outputs are TTL compatible
4
3 2 1 32 31 30
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2 10
A1 11
A0 12
DQ1 13
DQ2 14
DQ3 15
VSS 16
1
2
3
4
5
6
7
8
9
32 VCC
31 A15
30 CE2
29 WE\
28 A13
27 A8
5
6
7
8
9
10
11
12
13
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
29
28
27
26
25
24
23
22
21
WE
\
A13
A8
26 A9
A9
25 A11
24 OE\
23 A10
22 CE\
21 DQ8
20 DQ7
19 DQ6
18 DQ5
17 DQ4
A11
\
A10
CE1
OPTIONS
• Timing
MARKING
OE
\
DQ8
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
-12 (contact factory)
-15
14 15 16 17 18 19 20
-20
-25
-35
-45
-55*
-70*
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power
CMOS designs using a four-transistor memory cell, and are
fabricated using double-layer metal, double-layer polysilicon
technology.
For design flexibility in high-speed memory
applications, this device offers dual chip enables (CE1\, CE2)
and output enable (OE\). These control pins can place the
outputs in High-Z for additional flexibility in system design.
All devices operate from a single +5V power supply and all
inputs and outputs are fully TTL compatible.
Writing to these devices is accomplished when write
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.
Reading is accomplished when WE\ and CE2 remain HIGH and
CE1\ and OE\ go LOW. The devices offer a reduced power
standby mode when disabled, allowing system designs to
achieve low standby power requirements.
• Package(s)•
Ceramic DIP (400 mil)
Ceramic DIP (600 mil)
Ceramic LCC
Ceramic LCC
Ceramic Flatpack
Ceramic SOJ
C
No. 111
No. 112
No. 207
No. 208
No. 303
No. 501
No. 507
CW
EC
ECA
F
DCJ
SOJ
Ceramic SOJ
• 2V data retention/low power
L
*Electrical characteristics identical to those provided for the 45ns
access devices.
The “L” version offers a 2V data retention mode, re-
ducing current consumption to 1mA maximum.
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
1
SRAM
MT5C1008
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
GND
A
A
A
A
A
A
A
A
A
DQ8
DQ1
1,048,576-BIT
MEMORY ARRAY
(LSB)
CE1\
CE2
COLUMN DECODER
(LSB)
OE\
WE\
A A A A A A A A
POWER
DOWN
NOTE: The two least significant row address bits (A8 and A6) are encoded using gray code.
TRUTH TABLE
MODE
STANDBY
STANDBY
READ
READ
WRITE
OE\
X
X
L
H
CE1\
CE2
X
L
H
H
WE\
X
X
H
H
DQ
POWER
H
X
L
L
L
HIGH-Z STANDBY
HIGH-Z STANDBY
Q
HIGH-Z
D
ACTIVE
ACTIVE
ACTIVE
X
H
L
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
2
SRAM
MT5C1008
Austin Semiconductor, Inc.
*Stresses at or greater than those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated
in the operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods will affect reliability. Refer to page 17 of this
datasheet for a technical note on this subject.
ABSOLUTEMAXIMUMRATINGS*
Supply Voltage Range (Vcc)...............................-.5V to +6.0V
Storage Temperature ....................................-65°C to +150°C
Short Circuit Output Current (per I/O)….......................20mA
Voltage on any Pin Relative to Vss................-.5V to Vcc+1 V
Max Junction Temperature**.......................................+150°C
Power Dissipation .....................................................................1 W
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow, and humidity.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < T < 125oC & -45oC to +85oC; V = 5.0V +10%)
CC
C
DESCRIPTION
CONDITIONS
SYM
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
2.2
V
1
VIH
V
CC+0.5
-0.5
-10
0.8
10
V
1, 2
VIL
ILI
µA
0V<VIN<VCC
Output(s) disabled
0V<VOUT<VCC
Output Leakage Current
-10
2.4
10
µA
ILO
Output High Voltage
Output Low Voltage
V
V
1
1
I
OH=-4.0mA
OL=8.0mA
VOH
VOL
0.4
I
MAX
PARAMETER
CONDITIONS
SYM
-12
-15
-20
-25
-35
-45 UNITS NOTES
250
250
180
150
140
135
125
115
mA
mA
3
ICCSP
CE\ < VIL; OE\, WE\, and CE2>VIH
Power Supply
Current: Operating
VCC = MAX, f = MAX = 1/tRC (MIN)
Output Open
*L version only
180
25
140
25
130
25
125
25
ICCLP *
CE\=VIH, CE2=VIL; Other Inputs at
Power Supply
Current: Standby
ISBT
25
10
25
10
mA
mA
<VIL, >VIH, VCC = MAX
f = 0 Hz
CE\ > VCC -0.2V; VCC = MAX
VIL < VSS -0.2V
10
10
10
10
ISBC
VIH > VCC -0.2V; F = 0 Hz
CAPACITANCE
DESCRIPTION
CONDITIONS
SYM
MAX
UNITS
NOTES
Input Capacitance (A0-A16)
12
pF
pF
pF
4
CI
CO
CI
TA = 25oC, f = 1MHz
VCC = 5V
Output Capacitance
14
20
4
4
Input Capacitance (CE\, WE\, OE\)
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
3
SRAM
MT5C1008
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < T < 125oC & -40oC to +85oC; V = 5.0V +10%)
CC
C
-12
-15
-20
-25
-35
-45
DESCRIPTION
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
SYMBOL
READ CYCLE
tRC
tAA
tACE
tOH
READ cycle time
12
15
20
25
35
45
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
12
12
15
15
20
20
25
25
35
35
45
45
Chip Enable access time
Output hold from address change
3
3
3
3
3
3
3
3
3
3
3
3
tLZCE
tHZCE
tAOE
tLZOE
tHZOE
4, 6, 7
4, 6, 7
4, 6, 7
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Output Enable access time
Output Enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
7
7
7
7
8
7
10
10
15
15
20
20
0
0
0
0
0
0
7
7
8
10
15
20
4, 6, 7
tWC
tCW
tAW
WRITE cycle time
12
11
11
0
15
12
12
0
20
15
15
0
25
20
20
0
35
25
25
0
45
35
35
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable to end of write
Address valid to end of write
Address setup time
tAS
tAH
Address hold from end of write
WRITE pulse width
0
0
0
0
0
5
tWP
11
8
12
8
15
10
0
20
15
0
25
20
0
35
20
0
tDS
Data setup time
tDH
Data hold time
0
0
tLZWE
tHZWE
Write disable to output in Low-Z
Write Enable to output in High-Z
5
5
5
5
5
5
4, 6, 7
4, 6, 7
7
7
9
10
15
20
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
4
SRAM
MT5C1008
Austin Semiconductor, Inc.
+5V
+5V
480
ACTEST CONDITIONS
480
30
Input pulse levels ................................... Vss to 3.0V
Input rise and fall times ....................................... 5ns
Input timing reference levels ............................. 1.5V
Output reference levels ..................................... 1.5V
Output load .............................. See Figures 1 and 2
Q
Q
255
5 pF
255
Fig. 1 Output Load
Equivalent
Fig. 2 Output Load
Equivalent
7. At any given temperature and voltage condition,
NOTES
t
tHZCE is less thantLZCE, and HZWE is less than
1. All voltages referenced to VSS (GND).
2. -2V for pulse width < 20ns
tLZWE and tHZOE is less than tLZOE.
8. WE\ is HIGH for READ cycle.
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
unloaded, and f =
1
Hz.
tRC (MIN)
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6. tLZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV typical from steady state voltage,
allowing for actual tester RC time constant.
t
11. RC = Read Cycle Time.
12. CE2 timing is the same as CE1\ timing. The
waveform is inverted.
13. Chip enable (CE1\, CE2) and write enable (WE\) can
initiate and terminate a WRITE cycle.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS NOTES
2
---
V
VCC for Retention Data
VDR
CE\ > (VCC - 0.2V)
Data Retention Current
1.0
---
mA
VCC = 2V
ICCDR
VIN > (VCC - 0.2V)
or < 0.2V, f=0
Chip Deselect to Data
Retention Time
tCDR
tR
0
ns
ns
4
Operation Recovery Time
4, 11
tRC
LOWVcc DATA RETENTIONWAVEFORM
DATA RETENTION MODE
VCC
4.5V
4.5V
VDR > 2V
t
tCDR
R
VIH
CE1\
VIL
VDR
DON’T CARE
UNDEFINED
VIH
VIL
CE2
<VSS + 0.2V
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
5
SRAM
MT5C1008
Austin Semiconductor, Inc.
READ CYCLE NO. 1 8, 9
tRC
VALID
ADDRESS
DQ
tAA
tOH
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2 7, 8, 10, 12
tRC
CE\
tAOE
tHZOE
tHZCE
tLZOE
OE\
DQ
Icc
tLZCE
tACE
DATA VALID
tPU
tPD
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
6
SRAM
MT5C1008
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12, 13
(Chip Enabled Controlled)
tWC
ADDRESS
tAW
tAH
tAS
tCW
CE\
tWP1
WE\
tDS
tDH
DATA VAILD
D
Q
HIGH Z
7, 12, 13
WRITE CYCLE NO. 2
(Write Enabled Controlled)
tWC
ADDRESS
tAW
tCW
tAH
CE\
tAS
tWP1
WE\
tDH
D
Q
DATA VALID
HIGH-Z
NOTE: Output enable (OE\) is inactive (HIGH).
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
7
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #111 (Package Designator C)
SMD 5962-89598, Case Outline Z
D
S1
S2
A
Q
L1
Pin 1
L
b
S
e
b1
E
NOTE
c
0o to 15o
E1
SMD SPECIFICATIONS
SYMBOL
MIN
---
0.014
0.038
0.008
---
MAX
0.232
0.023
0.065
0.015
1.700
0.405
0.420
A
b
b1
c
D
E
0.350
0.390
E1
e
0.100 BSC
L
L1
Q
0.125
0.150
0.015
---
0.200
---
0.060
0.100
---
S
S1
S2
NOTE:
0.005
0.005
Either configuration in detail A is allowed on SMD.
---
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
8
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #112 (Package Designator CW)
SMD 5962-89598, Case Outline X
D
A
L
L1
b
e
Pin 1
b1
E
b2
E1
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.111
0.020
0.055
0.011
1.615
0.605
0.610
0.110
0.060
0.175
A
b
b1
b2
D
E
E1
e
0.089
0.016
0.045
0.009
1.585
0.585
0.595
0.090
0.040
0.125
L
L1
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
9
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #207 (Package Designator EC)
SMD 5962-89598, Case Outline U
See Detail A
A
L1
D
L
e
b
h x 45o
Detail A
E
L2
b2
b1
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.100
0.028
0.022
---
A
b
b1
b2
D
0.080
0.022
0.006
0.040
0.800
0.392
0.840
0.408
E
e
h
0.050 BSC
0.012 REF
L
L1
L2
0.070
0.090
0.003
0.080
0.110
0.015
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
10
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #208 (Package Designator ECA)
SMD 5962-89598, Case Outline M
D1
A
L1
e
E1
E
See Detail A
L
D
b
b2
Detail A
b1
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.120
0.028
0.014
---
A
b
b1
b2
D
0.060
0.022
0.004
0.040
0.442
0.458
D1
E
0.300 BSC
0.540
0.560
E1
e
0.400 BSC
0.050 BSC
L
L1
0.045
0.075
0.055
0.095
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
11
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #303 (Package Designator F)
SMD 5962-89598, Case Outline T
E
L
Pin 1
Index
e
32
1
D
b
17
16
Bottom View
S
S1
E1
Top View
A
c
Q
E2
E3
SMD SPECIFICATIONS
SYMBOL
MIN
0.097
0.015
0.003
---
0.400
---
0.180
0.030
MAX
0.125
0.019
0.009
0.830
0.420
0.450
---
A
b
c
D
E
E1
E2
E3
e
---
0.050 BSC
L
Q
S
0.250
0.026
---
0.370
0.045
0.045
---
S1
0.000
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
12
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #501 (Package Designator DCJ)
SMD 5962-89598, Case Outline 7
A
D
e
D1
B1
E2
E1
b
E
A2
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.144
0.036
0.040
0.019
0.828
0.760
0.415
0.445
0.380
A
A2
B1
b
D
D1
E
E1
E2
e
0.132
0.026
0.030
0.015
0.812
0.740
0.405
0.435
0.360
0.050 BSC
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
13
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #507 (Package Designator SOJ)
SMD 5962-89598, Case Outline Y
See Detail A
j
1
32
B
D1
B2
B1
D
E2
e2
e1
S1
A2
Base
Plane
17
16
B3
Seating
Plane
E
E1
Detail A
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
A
A1
A2
B
B1
B2
B3
b
0.120
0.088
0.165
0.120
0.070 REF
0.010 REF
0.030R TYP
0.020 REF
0.025
0.015
0.816
0.045
0.019
0.838
D
D1
E
E1
E2
e
e1
e2
j
0.750 REF
0.419
0.430
0.360
0.431
0.445
0.380
0.050 BSC
0.038 TYP
0.005
0.030
---
0.005 TYP
0.020 TYP
S
S1
0.040
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
14
SRAM
MT5C1008
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: MT5C1008CW-45/883C
EXAMPLE: MT5C1008ECA-25L/XT
Device
Number
Package Speed
Device
Number
Package Speed
Options** Process
Options** Process
Type
C
ns
Type
EC
ns
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
-12
-12
-15
-15
-20
-20
-25
-25
-35
-35
-45
-45
-55
-55
-70
-70
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
-12
-12
-15
-15
-20
-20
-25
-25
-35
-35
-45
-45
-55
-55
-70
-70
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
CW
C
ECA
EC
CW
C
ECA
EC
CW
C
ECA
EC
CW
C
ECA
EC
CW
C
ECA
EC
CW
C
ECA
EC
CW
C
CW
ECA
EC
ECA
EXAMPLE: MT5C1008F-25L/883C
EXAMPLE: MT5C1008DCJ-35/IT
Device
Number
Package Speed
Device
Number
Package Speed
Options** Process
Options** Process
Type
ns
Type
DCJ
SOJ
DCJ
SOJ
DCJ
SOJ
DCJ
SOJ
DCJ
SOJ
DCJ
SOJ
DCJ
SOJ
DCJ
SOJ
ns
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
-12
-12
-15
-15
-20
-20
-25
-25
-35
-35
-45
-45
-55
-55
-70
-70
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
MT5C1008
F
-12
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
F
F
F
F
F
F
F
-15
-20
-25
-35
-45
-55
-70
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
** OPTIONS
L = 2V Data Retention/Low Power
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
15
SRAM
MT5C1008
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER
CROSS REFERENCE
ASI Package Designator C & CW
ASI Package Designator EC & ECA
ASI Part #
SMD Part #
ASI Part #
SMD Part #
MT5C1008C-20/883C
MT5C1008C-20L/883C
MT5C1008C-25/883C
MT5C1008C-25L/883C
MT5C1008C-35/883C
MT5C1008C-35L/883C
MT5C1008C-45/883C
MT5C1008C-45L/883C
MT5C1008C-55/883C
MT5C1008C-55L/883C
MT5C1008C-70/883C
MT5C1008C-70L/883C
5962-8959838MZA
5962-8959821MZA
5962-8959837MZA
5962-8959820MZA
5962-8959836MZA
5962-8959819MZA
5962-8959835MZA
5962-8959818MZA
5962-8959834MZA
5962-8959817MZA
5962-8959833MZA
5962-8959816MZA
MT5C1008EC-20/883C
MT5C1008EC-20L/883C
MT5C1008EC-25/883C
MT5C1008EC-25L/883C
MT5C1008EC-35/883C
MT5C1008EC-35L/883C
MT5C1008EC-45/883C
MT5C1008EC-45L/883C
MT5C1008EC-55/883C
MT5C1008EC-55L/883C
MT5C1008EC-70/883C
MT5C1008EC-70L/883C
5962-8959838MUA
5962-8959821MUA
5962-8959837MUA
5962-8959820MUA
5962-8959836MUA
5962-8959819MUA
5962-8959835MUA
5962-8959818MUA
5962-8959834MUA
5962-8959817MUA
5962-8959833MUA
5962-8959816MUA
MT5C1008CW-20/883C
MT5C1008CW-20L/883C
MT5C1008CW-25/883C
MT5C1008CW-25L/883C
MT5C1008CW-35/883C
MT5C1008CW-35L/883C
MT5C1008CW-45/883C
MT5C1008CW-45L/883C
MT5C1008CW-55/883C
MT5C1008CW-55L/883C
MT5C1008CW-70/883C
5962-8959838MXA
5962-8959821MXA
5962-8959837MXA
5962-8959820MXA
5962-8959836MXA
5962-8959819MXA
5962-8959835MXA
5962-8959818MXA
5962-8959834MXA
5962-8959817MXA
5962-8959833MXA
MT5C1008ECA-20/883C
MT5C1008ECA-20L/883C
MT5C1008ECA-25/883C
MT5C1008ECA-25L/883C
MT5C1008ECA-35/883C
MT5C1008ECA-35L/883C
MT5C1008ECA-45/883C
MT5C1008ECA-45L/883C
MT5C1008ECA-55/883C
MT5C1008ECA-55L/883C
MT5C1008ECA-70/883C
MT5C1008ECA-70L/883C
5962-8959838MMA
5962-8959821MMA
5962-8959837MMA
5962-8959820MMA
5962-8959836MMA
5962-8959819MMA
5962-8959835MMA
5962-8959818MMA
5962-8959834MMA
5962-8959817MMA
5962-8959833MMA
5962-8959816MMA
MT5C1008CW-70L/883C
5962-8959816MXA
ASI Package Designator DCJ & SOJ
ASI Package Designator F
ASI Part #
SMD Part #
5962-8959838M7A
5962-8959821M7A
5962-8959837M7A
5962-8959820M7A
5962-8959836M7A
5962-8959819M7A
5962-8959835M7A
5962-8959818M7A
5962-8959834M7A
5962-8959817M7A
5962-8959833M7A
5962-8959816M7A
ASI Part #
SMD Part #
5962-8959838MTA
5962-8959821MTA
5962-8959837MTA
5962-8959820MTA
5962-8959836MTA
5962-8959819MTA
5962-8959835MTA
5962-8959818MTA
5962-8959834MTA
5962-8959817MTA
5962-8959833MTA
5962-8959816MTA
MT5C1008DCJ-20/883C
MT5C1008DCJ-20L/883C
MT5C1008DCJ-25/883C
MT5C1008DCJ-25L/883C
MT5C1008DCJ-35/883C
MT5C1008DCJ-35L/883C
MT5C1008DCJ-45/883C
MT5C1008DCJ-45L/883C
MT5C1008DCJ-55/883C
MT5C1008DCJ-55L/883C
MT5C1008DCJ-70/883C
MT5C1008DCJ-70L/883C
MT5C1008F-20/883C
MT5C1008F-20L/883C
MT5C1008F-25/883C
MT5C1008F-25L/883C
MT5C1008F-35/883C
MT5C1008F-35L/883C
MT5C1008F-45/883C
MT5C1008F-45L/883C
MT5C1008F-55/883C
MT5C1008F-55L/883C
MT5C1008F-70/883C
MT5C1008F-70L/883C
MT5C1008SOJ-20/883C
MT5C1008SOJ-20L/883C
MT5C1008SOJ-25/883C
MT5C1008SOJ-25L/883C
MT5C1008SOJ-35/883C
MT5C1008SOJ-35L/883C
MT5C1008SOJ-45/883C
MT5C1008SOJ-45L/883C
MT5C1008SOJ-55/883C
MT5C1008SOJ-55L/883C
MT5C1008SOJ-70/883C
MT5C1008SOJ-70L/883C
5962-8959838MYA
5962-8959821MYA
5962-8959837MYA
5962-8959820MYA
5962-8959836MYA
5962-8959819MYA
5962-8959835MYA
5962-8959818MYA
5962-8959834MYA
5962-8959817MYA
5962-8959833MYA
5962-8959816MYA
* ASI part number is for reference only. Orders received referencing
the SMD part number will be processed per the SMD.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
16
SRAM
MT5C1008
Austin Semiconductor, Inc.
DATE: 2/6/01
Technical Note:
128Kx8 SRAM – Maximum Recommended Supply
Voltage and Ambient Temperature
Compliance:
This product fully meets and is tested in compliance with SMD# 5962-89598 and tested in accordance
with JESD78.
Specific Product Affected:
Die Manufacturer: Alliance Semiconductor Corporation
Die Name: AS2008SA
Device Types: MT5C1008 , MT5C1009
Speed Grades: All
Package Designators: All
Identifying Date Code Marking: Change implemented on product starting with date code 0100.
Characteristic Identified:
Austin Semiconductor, Inc. has received notification from this die vendor, Alliance Semiconductor Corp.,
that operation at high Vcc’s of 6 volts and beyond may result in a latch-up condition. This can cause
permanent damage to the device.
Recommendation:
During use in system applications and during manufacturing processes, including Burn-In and Test, the
devices should not be subjected to Vcc Supply Voltages higher than 5.5Volts at 125°C.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MT5C1008
Rev. 6.5 7/02
17
相关型号：
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